Asm IP Holding B.v.

Timo Asikainen

Chiyu Zhu

Jan Willem Maes

Qi Xie

David Kurt De Roest

Delphine Longrie

Han Wang

Julian Hsieh

Suvi P Haukka

Eric James Shero

Michael Eugene Givens

Jaakko Anttila

Jerry Winkler

Petri Räisänen

Krzysztof Kachel

Harald Profijt

Robert Brennan Milligan

A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

Titanium aluminum and tantalum aluminum thin films

Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.

NbMC layers

Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

Selective deposition of aluminum and nitrogen containing material

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Helsinki, Finland

Timo Asikainen