Infineon Technologies Ag

Tim Schönauer

Christian Pacha

Michael Kund

Jörg Gliese

A memory device includes a multi gate field effect transistor (MuGFET) having a fin with a contact area. A programmable memory element abuts the fin contact area.

Resistive memory and method

A logic basic cell, a logic basic cell arrangement, and a logic device. A logic basic cell is provided for forming a logic combination of two data signals in accordance with a logic function that can be selected by means of a plurality of logic selection elements, having four data signal inputs, to which two data signals and the logically complementary data signals thereof can be applied, and having six logic selection elements between the data signal inputs. At a data signal output, the logic combination of the two data signals in accordance with the logic function selected by means of the logic selection elements can be provided as output signal.

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Feldkirchen, Germany

Tim Schönauer