Infineon Technologies Ag

Siemens Aktiengesellschaft

Infineon Technology Ag

Tim Gutheit

Matthias Stecher

Werner Schwetlick

Stefan Dankowski

Bernhard Lippmann

A carrier having one or more conductive terminals is provided. A semiconductor die is mounted on the carrier. The semiconductor die is electrically connected to the one or more conductive terminals. The semiconductor die is encapsulated with an electrically insulating mold compound. A verification rule that tests whether inputted information satisfies authentication criteria is created. A first identification feature is formed on a metal structure that is encapsulated by the mold compound. The first identification feature comprises one or more symbols from a first data representation scheme that are covered by the mold compound. The one or more symbols of the first identification feature are selected to convey information that satisfies the authentication criteria of the verification rule.

Semiconductor package authentication feature

Additional degrees of freedom are provided for optimizing the component properties by combining two doping profiles. The threshold voltage of NMOS or DMOS transistors can be set through the process parameters involved in the introduction and outward diffusion of the further dopant of the second conductivity type, independently of the deep concentration, since the dopant concentration at the surface can be chosen independently of the dopant concentration at depth. A low film resistance results from the great penetration depth of the semiconductor region through the combination of the two dopant profiles. The low film resistance leads to reduced pinching of the substrate current in an NMOS transistor, and to greater stability against &ldquo;latch-up&rdquo;, without substantially increasing the concentration of the dopants in the region of source/drain diffusions, and therefore without unfavorably affecting drain/bulk capacitance. In addition, the concentration of the further dopant of the second conductivity type can be kept low. A semiconductor region of a second conductivity type is thus attained which exhibits little outward lateral diffusion. Further, when the components are given the conventional polarity, the semiconductor region is insulated from the p-substrate by the buried zone.

Method of producing a transistor structure

Bridged, doped zones are formed in a semiconductor. A silicon nitride layer is deposited and structured on a semi-conductor region with a predetermined dopant concentration. The structure is subjected to thermal oxidation, with the result that at least one oxide region and at least two oxide-free regions, which are separated from one another by the oxide region, are produced on the surface of the semiconductor region. A dopant is introduced into the oxide-free regions and driven into the semiconductor region. A coherent zone is thus produced in the semiconductor region with a dopant concentration at least ten times the dopant concentration of the semiconductor region. This produces a coherent zone having a high dopant concentration which is bridged by the oxide region which separates the oxide-free regions on the surface of the semiconductor region. Conductive layers, such as a polysilicon layer or a metal layer, for example, can be formed on the oxide region (oxide bridge), with the assurance the conductive layer is completely insulated from the doped zone.

Method for producing bridged doped zones

Method for producing bridged, doped zones

Growing community of inventors

Taufkirchen, Germany

Tim Gutheit