Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Ams-osram International Gmbh

International Solar Energy Research Center Konstanz E.v.

Tim Boescke

Wolfgang Zinkl

Massimo Cataldo Mazzillo

Andrey Lysov

Daniel Dietze

Matthias Sperl

Carola Diez

Thomas Kippes

Christopher Koelper

Melanie Sternecker

Gerd Plechinger

Daniele Brunazzo

Robert Bock

Patrick Sadler

An optoelectronic sensor component for measuring light may include a first signal channel, a second signal channel, a first light-sensitive detection assembly, a second light-sensitive detection assembly, a further light-sensitive detection assembly, and an assigned further signal channel. The first signal channel may provide a first electrical signal, which represents the intensity of light incident on the sensor component. The second signal channel may provide a second electrical signal representing the intensity of the light incident on the sensor component. The first and second light-sensitive detection assemblies may generate the first and second electrical signals, respectively, and be assigned to the first and second signal channels, respectively. Both detection assemblies may have an identical spectral sensitivity and are thus redundant with respect to one another. The spectral sensitivity of both detection assemblies may have a photopic profile. The further light-sensitive detection assembly may be configured for detecting only infrared light.

Optoelectronic sensor component for measuring light with built-in redundancy

An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.

Light detection with semiconductor photodiodes

An optoelectronic sensing device may include an optoelectronic detection device configured to detect light and provide an electrical signal as a function of detected light. The device may further include a signal detection device configured to store at least one signal value of the electrical signal in a memory during a time interval of repeating time intervals and to output an indication signal after the time interval has elapsed.

Optoelectronic sensor device, detector and electronic device, and method of operating such a sensor device or detector

In an embodiment a photodiode includes a semiconductor body having a light entrance side and a back side opposite the light entrance side, a first electrode at the light entrance side atop a first doped area of a first conductivity type, a second electrode at the light entrance side atop a second doped area of a second conductivity type, the second doped area being configured to absorb radiation, a gate region at the light entrance side at least between the first electrode and the second electrode, the gate region being connected to a gate electrode, a base electrode at the semiconductor body, the base electrode being configured to receive a current flow from the first electrode, the current flow being indicative of a radiant flux of the radiation onto the second doped area and a radiation shield covering and shielding the first doped area from the radiation to be detected.

Photodiode and method for operating a photodiode

A semiconductor photodiode () comprises a top side () with an active surface area () for light entry, a bottom side (), a bulk structure () made of a single semiconductor material, the bulk structure comprising a p-type layer () and an n-type layer (), which together form the p-n junction () of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer () and the other one is a lower p-n junction layer (), wherein the upper p-n junction layer () is located proximate to the active surface area (), and a semiconductor light absorption layer (), wherein the light absorption layer (), () defines the active surface area () and is arranged on top of the bulk structure (), above the upper p-n junction layer (), and the semiconductor material of the light absorption layer () is different from the semiconductor material of the bulk structure (), the light absorption layer () and the upper p-n junction layer () thus forming a heterojunction, and the photodiode () further comprises a precursor layer () arranged between the bulk structure () and the light absorption layer (), the light absorption layer () being grown on the precursor layer.

A transimpedance amplifier may include a voltage-controlled operational amplifier having a non-inverting input connected to ground, an inverting input receiving a current signal to be amplified, an output coupled to the inverting input via a coupling resistor, and a power-down input (PWDN input) activated upon receipt of at least one power-down signal (PWDN) such that at least one internal current source is thereupon deactivated.

Transimpedance amplifier and receiver circuit for optical signals with a photodiode and a transimpedance amplifier

A method and an optical sensor are described herein. The optical sensor may include a communication interface for receiving data from a control unit and for transmitting data to the control unit, a storage unit with at least one register for storing data, and a CRC generator for generating a CRC checksum. The optical sensor may be configured in such a way that when data stored in the storage unit is to be transmitted to the control unit, the communication interface receives from the control unit a device address specific to the optical sensor and an address of a register in which the data to be transmitted is stored. The CRC generator may be initialized using the device address received from the communication interface and/or the register address received from the communication interface, before the CRC generator generates a CRC checksum for the data to be transmitted.

Electronic device having a CRC generator and method for transmitting data from an electronic device to a control unit

A photonic gas sensor and a method for producing a photonic gas sensor are disclosed. In an embodiment a photonic gas sensor includes a component housing with at least one cavity, a radiation-emitting semiconductor chip arranged in the cavity and configured to transmit electromagnetic radiation in a first wavelength range, a radiation-detecting semiconductor chip arranged in the cavity and configured to detect electromagnetic radiation in a second wavelength range and an active sensor element having a fluorescent dye configured to emit electromagnetic radiation in the second wavelength range upon being excited by electromagnetic radiation in the first wavelength range, wherein an intensity of the emitted electromagnetic radiation in the second wavelength range changes reversibly in presence of a gas to be detected.

Photonic gas sensor and method for producing a photonic gas sensor

In an embodiment a sensor device includes a first optoelectronic emitter configured to irradiate a spot with electromagnetic rays, a second optoelectronic emitter configured to irradiate the spot with electromagnetic rays, a detector configured to detect electromagnetic rays from the first and second emitters reflected at or transmitted through the spot, wherein the electromagnetic rays of the first emitter have a wavelength in a range of 1400-1500 nm, wherein the electromagnetic rays of the second emitter have a wavelength in a range of 900-1100 nm, and wherein the second emitter is configured to emit at least one further electromagnetic signal, the one further electromagnetic signal not being used for measuring a humidity.

Sensor device

A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.

Semiconductor light source, operating method and spectrometer

A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle.

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Wuppertal, Germany

Tim Boescke