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Solarworld Industries Thueringen Gmbh

Robert Boschgmbh

Tim Boescke

Daniel Kania

Claus Schoellhorn

The invention relates to a method for producing a solar cell () from crystalline semiconductor material, wherein a first doping region () is formed by means of ion implantation (S) of a first dopant in a first surface () of a semiconductor substrate (), and a second doping region () is formed by means of ion implantation (S) or thermal indiffusion of a second dopant in the second surface () of the semiconductor substrate. After the doping of the second surface, a cap () acting as an outdiffusion barrier for the second dopant is applied and an annealing step (S) is subsequently carried out.

Method for producing a solar cell involving doping by ion implantation and depositing an outdiffusion barrier

In a method for producing a solar cell having a substrate made of crystalline silicon, on a surface of the Si substrate, a locally defined n-doped emitter region is produced by full-surface cold coating of the surface using a P-containing coating, followed by a local laser beam-doping of P atoms from the P-containing coating, and subsequent thermal driving in of the P atoms, starting from the doping-in region.

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Erfurt, Germany

Tim Boescke