Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Tilman Schlenker

Markus Heinrich Klein

Karsten Heuser

Ralph Paetzold

Christian Schmid

Marc Philippens

Andrew Ingle

Heribert Zull

Erwin Lang

Richard Baisl

Michael Fehrer

Alfred Lell

Michael Popp

Martin Müller

Uwe Strauβ

Sönke Tautz

Günter Schmid

Nina Riegel

Benjamin Krummacher

Ralf D Krause

Arvid Hunze

Thomas Dobbertin

Peter Gröppel

Doreen Heppner

Dirk Becker

Stefan Seidel

Peter Groeppel

Evelyn Trummer-Sailer

Ralph Pätzold

Egbert Höfling

Fryderyk Kozlowski

Günter Gieres

Markus Klein

A method for producing an electronic component and an electronic component, having barrier layers for the encapsulation of the component. The method involves providing a substrate () with at least one functional layer (), and an electronic component, applying at least one first barrier layer () on the functional layer () by way of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer () on the functional layer () by way of plasma-enhanced chemical v0apor deposition (PECVD).

Method for producing an electronic component and electronic component

A device that includes a component and an encapsulation arrangement for the encapsulation of the component with respect to moisture and/or oxygen, wherein the encapsulation arrangement has a first layer and thereabove a second layer on at least one surface of the component, the first layer and the second layer each comprise an inorganic material, and the second layer is arranged directly on the first layer.

Device comprising an encapsulation unit

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

Optoelectronic component and method of producing an optoelectronic component

An organic light-emitting component includes a substrate on which a functional layer stack is applied, the stack including a first electrode, an organic functional layer stack thereover including an organic light-emitting layer and a translucent second electrode thereover, and a translucent halogen-containing thin-film encapsulation arrangement over the translucent second electrode, wherein a translucent protective layer having a refractive index of more than 1.6 is arranged directly on a translucent second electrode between the translucent second electrode and the thin-film encapsulation arrangement, and the thin-film encapsulation arrangement is arranged directly on the translucent protective layer.

Organic light-emitting element and method of producing an organic light-emitting element

A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate with at least one functional layer, applying at least one first barrier layer on the functional layer via plasma enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer on the functional layer by means of plasma-enhanced chemical vapor deposition (PECVD), where the at least one first barrier layer is applied at a temperature of less than 100&#xb0; C.

An organic electronic device and a method of making an organic electronic device are provided. An embodiment of an electronic device includes a substrate, an active layer disposed on the substrate and a thin-layer encapsulation disposed on the active layer. The device further includes a first adhesive layer disposed on the thin-layer encapsulation, wherein the first adhesive layer comprises a getter material and a covering layer disposed on the first adhesive layer.

Encapsulation for an organic electronic device

A method for producing an electronic component with at least one first electrode zone () and one second electrode zone (), which are separated from one another by an insulator () and each comprise at least one sublayer of a first electrically conductive material. Also disclosed is an electronic component, which may be produced using the disclosed method.

Method for producing an electronic component

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner.

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic device is provided which comprises a functional layer stack (), an encapsulation layer () provided for encapsulating the layer stack, and at least one metal layer (), wherein the functional layer stack comprises at least one organic active layer (), which emits electromagnetic radiation when the device is in operation, the encapsulation layer completely covers the at least one organic active layer when viewed in plan view onto the layer stack, and the metal layer is arranged on a side of the encapsulation layer remote from the layer stack.

Optoelectronic device

Various embodiments may relate to a method for producing an optoelectronic component. The method may include providing an optoelectronic component comprising a dielectric layer on or above an electrically conductive layer, wherein the dielectric layer is designed for sealing the electrically conductive layer substantially hermetically impermeably with regard to water, wherein the dielectric layer has diffusion channels, and closely closing the dielectric layer, wherein at least some of the diffusion channels in the dielectric layer are closed.

Organic optoelectronic element including diffusion channels

An organic light-emitting component includes a substrate on which a functional layer stack is applied, the stack including a first electrode, an organic functional layer stack thereover including an organic light-emitting layer and a translucent second electrode thereover, and a translucent halogen-containing thin-film encapsulation arrangement over the translucent second electrode, wherein a translucent protective layer having a refractive index of more than 1.6 is arranged directly on the translucent second electrode between the translucent second electrode and the thin-film encapsulation arrangement.

An organic optoelectronic device has a first substrate, on which a functional layer stack having at least one first electrode, thereabove an organic functional layer and thereabove a second electrode is arranged. A encapsulating arrangement includes a second substrate, on which a connecting material and at least one spacer facing the functional layer stack are applied. The connecting material is arranged between the first and second substrate and mechanically connects the first and second substrate together. The functional layer stack is enclosed by the connecting material in a frame-like manner. At least one of the first and second electrode includes at least one opening, above which the at least one spacer is arranged and which has a larger lateral dimension that the spacer.

Organic optoelectronic device and method for producing an organic optoelectronic device

An encapsulation structure for an optoelectronic component, may include: a thin-film encapsulation for protecting the optoelectronic component against chemical impurities; an adhesive layer formed on the thin-film encapsulation; and a cover layer formed on the adhesive layer and serving for protecting the thin-film encapsulation and/or the optoelectronic component against mechanical damage, wherein the adhesive layer is formed such that particle impurities situated at the surface of the thin-film encapsulation are at least partly enclosed by the adhesive layer.

Encapsulation structure for an opto-electronic component

An optoelectronic component having a substrate (), an anode () and a cathode () and at least one active layer () disposed between the anode and the cathode. An amorphous dielectric layer () which contains or consists of a metal oxide, a metal nitride or a metal oxynitride is disposed directly on the cathode-side surface of the anode. The metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or several of the metals of the group consisting of aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc.

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Nittendorf, Germany

Tilman Schlenker