Advanced Ion Beam Technology, Inc.

Tienyu Sheng

Stephen E Savas

Jiong Chen

Cheng-Hui Shen

Junhua Hong

Linuan Chen

Hao Chen

Susan Felch

Yun-Ju Yang

William Divergilio

Nai-Yuan Cheng

A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.

Plasma-based material modification using a plasma source with magnetic confinement

An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.

Method and device of ion source generation

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Saratoga, CA, United States of America

Tienyu Sheng