Western Digital Technologies, Inc.

Sandisk Technologies Inc.

Tienchien Kuo

Nian Niles Yang

Steven Theodore Sprouse

Gautam Ashok Dusija

Niles Yang

Daniel Edward Tuers

Philip David Reusswig

Jonathan Hsu

Xinmiao Zhang

Nan Lu

Chao-Han Cheng

Zelei Guo

Systems, methods, and/or devices are used to manage open blocks within non-volatile storage devices, in order to improve the reliability of non-volatile storage devices. In some embodiments, when a shut-down request is received from a host device, the storage device fetches information about open blocks and their boundary regions susceptible to data reliability issues, and for each identified boundary region, the storage device programs a region contiguous to the identified boundary region. In some embodiments, the device updates an XOR parity table used for XOR parity management with the information that the region contiguous to the identified boundary is programmed. Subsequently, in some embodiments, the storage device can use the information, stored in the contiguous region and/or the XOR parity table, for data recovery in the event of a data loss. As a result, the reliability of the non-volatile storage device is improved.

Method and system for improving open block data reliability

In an illustrative example, a data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller includes an erasure correcting code engine configured to generate first erasure recovery data and temporary erasure recovery data in a volatile memory at least partially based on first data to be written to the non-volatile memory. The first erasure recovery data is configured to enable a first type of data recovery of the first data, and the temporary erasure recovery data is configured to enable a second type of data recovery of the first data. The controller is further configured to store the first erasure recovery data and the temporary erasure recovery data in the volatile memory and, after verifying that the first data is stored in the non-volatile memory, to discard or modify the temporary erasure recovery data.

Erasure correcting coding using temporary erasure data

A data storage device includes a memory (including a single level cell (SLC) memory portion and a multilevel cell (MLC) memory portion), a plurality of data latches, and routing circuitry coupled to the plurality of data latches. The routing circuitry is configured to cause write data, received from a controller, to be stored at a data latch of the plurality of data latches. The routing circuitry is further configured to cause the write data to be copied from the data latch to a particular portion of the memory based on receiving a program mode command after the write data is stored at the data latch, where the program mode command indicates the particular portion as one of the SLC memory portion or the MLC memory portion.

Write redirect

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Tienchien Kuo