Taiwan Semiconductor Manufacturing Comp. Ltd.

Tien-Sheng Lin

Chen-Yi Lee

Chiu-Hua Chung

Yi-Cheng Chiu

Sheng-Fu Hsu

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has a source region and a drain region in a substrate, a gate structure and a metallic line. The source region surrounds the drain region in the substrate. The gate structure is disposed on the substrate, and disposed between the source region and the drain region. The gate structure surrounds the drain region. The metallic line is located above the source and drain regions and the gate structure and electrically connected to the drain region or the source region. The source region includes a doped region having a break region located between two opposite ends of the doped region. The metallic line extends from the drain region, across the gate structure and across the break region and beyond the source region.

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Taoyuan, Taiwan

Tien-Sheng Lin