Taiwan Semiconductor Manufacturing Comp. Ltd.

Tien Sheng Lin

Chun Lin Tsai

Kuo-Ming Wu

Wen-Chih Chiang

Yi-Min Chen

Shiuan-Jeng Lin

Chiu-Hua Chung

Yi-Cheng Chiu

Hung-Chou Lin

Karthick Murukesan

Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is integrated with a high voltage metal-oxide-semiconductor (HVMOS) device and a high voltage junction termination (HVJT) device. In some embodiments, a drift well is in the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. A first switching device is on the drift well. A second switching device is on the semiconductor substrate, at an indent in a sidewall the drift well. A peripheral well is in the semiconductor substrate and has a second doping type opposite the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.

Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device

Growing community of inventors

Yangmei, Taiwan

Tien Sheng Lin