Micron Technology Incorporated

Tien Minh Quan Tran

David A Kewley

Adam L Olson

Xiaosong Zhang

Merri Lyn Carlson

Md Zakir Ullah

Kok Siak Tang

Chao Zhu

Mohammad Moydul Islam

Zhigang Yang

Hui Chin Chong

Lifang Xu

Justin B Dorhout

Matthew J King

Matthew Park

Shruthi Kumara Vadivel

Jason Reece

Biow Hiem Ong

Joel D Peterson

Michael J Gossman

Bo Zhao

Martin Jared Barclay

Kah Sing Chooi

Zhen Feng Yow

A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

Microelectronic devices including stadium structures

Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. First and second arrays of pillars extend through the stack structure of the lower and upper decks, respectively. In one or more of the first and second pillar arrays, at least some pillars exhibit a greater degree of bending away from a vertical orientation than at least some other pillars. The pillars of the first array align with the pillars of the second array along an interface between the lower and upper decks. Related methods are also disclosed.

Microelectronic devices with tiered decks of aligned pillars exhibiting bending and related methods

Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A lower array of pillars extends through the stack structure of the lower deck, and an upper array of pillars extends through the stack structure of the upper deck. Along an interface between the lower deck and the upper deck, the pillars of the lower array align with the pillars of the upper array. At least at elevations comprising bases of the pillars, a pillar density of the pillars of the lower array differs from a pillar density of the pillars of the upper array, 'pillar density' being a number of pillars per unit of horizontal area of the respective array. Related methods and electronic systems are also disclosed.

Microelectronic devices with tiered decks of differing pillar density and related methods and systems

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Singapore, Singapore

Tien Minh Quan Tran