Mosel Vitelic Corporation

Tien-Min Yuan

Chien-Ping Chang

Mao-Song Tseng

Shih-Chi Lai

Hsin-Huang Hsieh

Mao Song Tseng

Tsung-Hua Wu

Hsin Huang Hsieh

Yen-Chung Feng

A method of manufacturing a trench MOSFET with high cell density is disclosed. The method introduces a sidewall oxide spacer for narrowing the opening of the trench structure, thereby decreasing the cell pitch of the memory units. Moreover, the source structure is formed automatically by means of an extra contact silicon etch for preventing the photoresist from lifting during the ion implantation of the prior art. On the other hand, the contact structure is filled with W-plug for overcoming the defect of poor metal step coverage resulted from filling the contact structure with AlSiCu according to the prior art. Thus, the cell density of the device can be increased; and the Rds-on and the power loss of the device can be decreased.

Method for manufacturing trench MOSFET

The present invention provides a manufacturing process and the structure of an integrated circuit. In one embodiment, one polysilicon layer deposition and one polysilicon layer etching are used to form the gate of a trench device and the polysilicon layer of a planar device simultaneously. The present invention not only has overcome the problem of the electric leakage, but also has the advantages of withstanding a higher voltage, reducing the relevant cost and increasing the yields. The present invention possesses the outstanding technical features in the field of the power device.

Manufacturing process and structure of integrated circuit

A method of in situ reactive gas plasma treatment is disclosed. The method is capable of removing a residue remained in a metal etching chamber after the metal etching process to improve the yield of the wafer and the particle performance of the metal etching chamber. The method includes the steps of (a) vactuating the metal etching chamber after the metal etching process, (b) introducing a reactive gas to the metal etching chamber, and (c) applying an electromagnetic power to the metal etching chamber for producing a plasma derived from the reactive gas to remove the residue inside the metal etching chamber and/or on the wafer.

Method of in situ reactive gas plasma treatment

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Hsinchu, Taiwan

Tien-Min Yuan