Other

Advanced Micro Devices Corporation

Transmeta Corporation

Fujitsu Corporation

Tien-Min Chen

Kazuhiro Kurihara

Takao Akaogi

Robert Chipin Fu

James B Burr

Ming-Huei Shieh

Kleanthes G Koniaris

Vjekoslav Svilan

A control circuit for substrate potential regulation for an integrated circuit device. The control circuit includes a current source configured to generate a reference current. A variable resistor is coupled to the current source. The variable resistor is configured to receive the reference current and generate a reference voltage at a node between the current source and the variable resistor. The reference voltage controls the operation of a substrate potential regulation circuit coupled to the node.

Precise control component for a substarate potential regulation circuit

A body-bias voltage source having an output monitor, charge pump, and shunt. a shunt circuit having on/off control is coupled to the output monitor and to the output of the charge pump. Upon sensing that the output voltage of the charge pump is above a desired value, the output monitor may disable the charge pump circuit and may enable the shunt circuit to reduce the voltage at the output of the charge pump. When the voltage output of the charge pump is below the desired value, the output monitor may disable the shunt circuit and may enable the charge pump circuit. A shunt circuit having proportional control may be substituted for the shunt circuit with on/off control.

Feedback-controlled body-bias voltage source

A drive frequency source with two selectable output frequencies connected to two charge pump arrays. A first array of basic charge pump units is connected to the first output frequency and a second array of basic charge pump units is connected to the output frequency. One or more of the basic charge pump units making up the aforementioned first and second charge pump arrays has an enable input allowing its output current contribution to be added or subtracted from the total array output. The output of the first array is coupled to a P-type substrate and the output of the second array is coupled to an N-well residing in the P-type substrate. A controller may be coupled to the drive frequency source for selecting the output frequencies, and an output monitor may be coupled between the array outputs and the controller to provide feedback.

Variable output charge pump circuit

Precise control component for a substrate potential regulation circuit

An integrated circuit with body-bias inputs coordinated by a switch at initial power application. A switch coupled to the N-well bias and P-type substrate bias lines of an integrated circuit selectively couples the substrate to ground or the substrate bias supply, depending upon the state of the bias supply lines. During power-up and the initial application of the N-well bias, the substrate is coupled to ground to prevent a leakage induce rise in the substrate potential. Upon sensing the presence of the substrate bias potential on the substrate bias line, the switch couples the substrate to the substrate bias line instead of ground. In another embodiment, a switch indirectly senses the availability of the substrate bias potential by sensing a charge pump enable signal.

System for substrate potential regulation during power-up in integrated circuits

A servo loop for a charge pump including comparator. A variable resistor and comparator are in series and couple the output of the charge pump to an enable input. A current source/sink coupled to the variable resistor provide a first input voltage to the comparator, with the second input of the comparator being coupled to ground or V. A shunt circuit in parallel with the load at the output of the charge pump is also coupled to the output of the comparator. The charge pump and shunt are alternately enabled and disabled by the comparator to maintain a body-bias supply voltage. The servo loop may be configured to provide body-bias for NFETs or PFETs.

Servo loop for well bias voltage source

Systems and methods of suppressing latchup. In accordance with a first embodiment of the present invention a latchup suppression system comprises a voltage comparator for comparing a voltage applied to a body terminal of a semiconductor device to a reference voltage. The voltage comparator is also for controlling a selective coupling mechanism. The selective coupling mechanism is for selectively coupling the body terminal to a respective power supply. The latchup suppressing system is preferably independent of a voltage supply for applying a voltage to the body terminal.

Method and system for latchup suppression

A stabilization component for substrate potential regulation for an integrated circuit device. A comparator is coupled to a charge pump to control the charge pump to drive a substrate potential. A stabilization component is coupled to the comparator and is operable to correct an over-charge of the substrate by shunting current from the substrate.

Stabilization component for a substrate potential regulation circuit

A body-bias voltage source having an output monitor, charge pump, and shunt. A shunt circuit having on/off control is coupled to the output monitor and to the output of the charge pump. Upon sensing that the output voltage of the charge pump is above a desired value, the output monitor may disable the charge pump circuit and may enable the shunt circuit to reduce the voltage at the output of the charge pump. When the voltage output of the charge pump is below the desired value, the output monitor may disable the shunt circuit and may enable the charge pump circuit. A shunt circuit having proportional control may be substituted for the shunt circuit with on/off control.

Growing community of inventors

San Jose, CA, United States of America

Tien-Min Chen