National Yang Ming Chiao Tung University

Tsinghua University

Tien-Fu Chen

Meng-Fan Chang

Ching-Fa Yeh

Jen-Chung Lou

Keng-Hao Yang

Chien-Chih Chen

Yu-Lin Chen

Jing-Ren Chen

Chia-Yin Li

A separate quantization method of forming a combination of 4-bit and 8-bit data of a neural network is disclosed. When a training data set and a validation data set exist, a calibration manner is used to determine a threshold for activations of each of a plurality of layers of a neural network model, so as to determine how many of the activations to perform 8-bit quantization. In a process of weight quantization, the weights of each layer are allocated to 4-bit weights and 8-bit weights according to a predetermined ratio, so as to make the neural network model have a reduced size and a combination of 4-bit and 8-bit weights.

Separate quantization method of forming combination of 4-bit and 8-bit data of neural network

A tag memory and a cache system with automating tag comparison mechanism and a cache method thereof are provided. The tag memory in the cache system includes a memory cell array, sensing amplifiers and a tag comparison circuit. The memory cell array stores cache tags, and outputs row tags of the cache tags according to an index in a memory address. The sensing amplifiers perform signal amplifications on the row tags to serve as comparison tags. The tag comparison circuit performs parallel comparisons between a target tag in the memory address and the row tags. When one of the row tags matches the target tag, the tag comparison circuit outputs a location of the matched row tag to serve as a first column address. The first column address is a column address where the memory address corresponds to a first data memory in the cache system.

Tag memory and cache system with automating tag comparison mechanism and cache method thereof

The present disclosure provides a memory apparatus including a memory cell array, a plurality of sense amplifiers, at least one first comparing circuit, and a plurality of second comparing circuit. The memory cell array includes a plurality of memory cells. Each of the sense amplifier generates a data signal and an inverted data signal according to a bit line signal and an inverted bit line signal. The first comparing circuits compares the data signals of first and second sense amplifiers with a first tag to generate a first comparing result. The second comparing circuits respectively compare a plurality of second tags with the data signals of the sense amplifiers to respectively generate a plurality of second comparing results.

Memory apparatus

The present invention provides a method for fabrication of polycrystalline silicon thin film transistors, which forms a silicon spacer on the sidewall of the active layer of a thin film transistor (TFT) by way of anisotropic plasma etching in a single direction. The silicon spacer provides a mechanism for laser recrystallization on the sidewall to prevent the active layer from shrinkage or shelling-off after the laser recrystallization. According to the present invention, large grains can be formed in the channel without additional mask during production. By doing so, the characteristics of the components are enhanced; the uniformity is improved; and, the production cost is lowered. Therefore, this technique will play an important role in the fields of low temperature polycrystalline silicon thin film transistor (LTPS-TFT).

Method for fabrication of polycrystalline silicon thin film transistors

A method for fabricating polycrystalline silicon film transistors, which includes a polysilicon spacer capping onto a sidewall of an active layer in the thin film transistors by an isotropic dry etching of the silicon film. This method suppresses the shrinkage of the active layer during recrystallization by the laser. Large grains are formed in the channel after recrystallization utilizing a high-energy continuous wavelength laser or an excimer laser annealing the active layer. This process does not require an additional mask. Uniform arrangement of grain boundaries and large grain sizes promotes uniformity of performance of the device, which is important in the fields of low temperature polycrystalline silicon thin film transistors (LTPS-TFTs).

Growing community of inventors

Hsinchu, Taiwan

Tien-Fu Chen