Macronix International Co., Ltd.

Tien Fan Ou

Wen Jer Tsai

Hsuan Ling Kao

Erh-Kun Lai

Yi Ying Liao

Wen-Jer Tsai

A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

Gated diode nonvolatile memory structure with diffusion barrier structure

A vertical nonvolatile memory cell with a charge storage structure includes a charge control structure with three nodes. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

Vertical nonvolatile memory cell, array, and operation

Gated diode nonvolatile memory operation

A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

Gated diode nonvolatile memory process

A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Various embodiments may include or exclude a diffusion barrier structure between the diode nodes. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

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Taipei, Taiwan

Tien Fan Ou