Taiwan Semiconductor Manufacturing Comp. Ltd.

Tien Chun Yang

Chih-Chang Lin

Yuwen Swei

Ming-Chieh Huang

Chan-Hong Chern

Chiang Pu

A regulator for regulating a charge pump is provided. The regulator includes a comparator having a first input end capable of receiving a first voltage and a second input end capable of receiving a second voltage for determining enabling or disabling the charge pump. The first voltage is associated with an output voltage of the charge pump. The second voltage is associated with an internal power voltage and a reference voltage V.

Regulators regulating charge pump and memory circuits thereof

A method of operating a first voltage regulator includes electrically coupling a transistor of an output stage of the first voltage regulator between a first power voltage and a second power voltage, and reverse biasing a bulk of the transistor by a back-bias circuit during a standby mode of a memory array. The first voltage regulator is coupled to a second voltage regulator and reverse biasing the bulk of the transistor reduces a contention current between the first voltage regulator and the second voltage regulator.

Method of operating a voltage regulator to reduce contention current

A voltage regulator includes an output stage electrically coupled with an output end of the voltage regulator. The output stage includes at least one transistor having a bulk and a drain. At least one back-bias circuit is electrically coupled with the bulk of the at least one transistor. The at least one back-bias circuit is configured to provide a bulk voltage, such that the bulk and the drain of the at least one transistor are reverse biased during a standby mode of a memory array that is electrically coupled with the voltage regulator.

Voltage regulators, memory circuits, and operating methods thereof

A voltage regulator includes an amplifier, an output stage coupled with the amplifier, at least one back-bias circuit, and an output end coupled with the output stage and with the amplifier. The output stage includes at least one transistor having a bulk and a drain. The at least one back-bias circuit is coupled with the bulk of the at least one transistor. The output end is configured to be coupled with a memory array and with an output end of another voltage regulator. The back-bias circuit is configured to reduce a contention current between the voltage regulator and the other voltage regulator during a standby mode.

Voltage regulator

A method of making a level shifter includes coupling a driver stage between an input end and an output end, the driver stage comprising a first transistor and a second transistor. An inverter having an input is coupled with the input end. A third transistor having a gate end is coupled with an output of the inverter, the third transistor having a terminal coupled to a pumped voltage (VPP). Additionally, the method includes coupling a fourth transistor with the output end, the fourth transistor having a terminal coupled to the pumped voltage. A fifth transistor is coupled with the input end, the fifth transistor having a terminal coupled to the third and fourth transistors. A sixth transistor is coupled with the input end, the sixth transistor having a terminal.

Level shifters, methods for making the level shifters and methods of using integrated circuits

A level shifter includes an input end being capable of receiving an input voltage signal. The input voltage signal includes a first state transition from a first voltage state to a second voltage state. An output end can output an output voltage signal having a second state transition from a third voltage state to the second voltage state corresponding to the first state transition of the input voltage signal. A driver stage is coupled between the input end and the output end. The driver stage includes a first transistor and a second transistor. Substantially immediately from a time corresponding to about a mean of voltage levels of the first voltage state and the second voltage state, the second voltage state is substantially free from being applied to a gate of the first transistor so as to substantially turn off the first transistor.

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San Jose, CA, United States of America

Tien Chun Yang