Phison Electronics Corporation

Chang Yang Business Enterprise Co., Ltd.

Tien-Ching Wang

Kuo-Hsin Lai

Wei Hung Lin

Yu-Cheng Hsu

Li-Chun Liang

Yu-Hsiang Lin

Shao-Wei Yen

Kuo-Yi Cheng

Szu-Wei Chen

Siu-Tung Lam

Chi-Heng Yang

Pei-Yu Shih

A decoding method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The decoding method includes: reading first data from memory cells of the rewritable non-volatile memory module, wherein the first data includes a first bit stored in a first memory cell; obtaining a storage state of at least one second memory cell which is different from the first memory cell; obtaining first reliability information corresponding to the first bit according to the storage state of the second memory cell, wherein the first reliability information is different from default reliability information corresponding to the first bit; and decoding the first data according to the first reliability information. Therefore, a decoding efficiency can be improved.

Decoding method, memory storage device and memory control circuit unit

A decoding method for a rewritable non-volatile memory module is provided. The method includes reading data from a plurality of memory cells of the rewritable non-volatile memory module according to a first voltage, wherein the data includes a user data string and an error checking and correcting code set. The method also includes decoding at least part of sub data units i the user data string according to a first decoding algorithm to obtain a plurality of decoded sub data units. The method further includes restoring a value of the corrected bit to an original bit value if a corrected bit in the decoded sub data units matches a reliability condition.

Decoding method, memory control circuit unit and memory storage apparatus

An error processing method for a rewritable non-volatile memory module, a memory storage device and a memory controlling circuit unit are provided. The rewritable non-volatile memory module includes a plurality of memory cells. The error processing method includes: sending a first read command sequence for reading a plurality of bits from the memory cells; performing a first decoding on the bits; determining whether each error belongs to a first type error or a second type error if the bits have at least one error; recording related information of a first error in the at least one error if the first error belongs to the first type error; and not recording the related information of the first error if the first error belongs to the second type error. Accordingly, errors with particular type may be processed suitably.

Error processing method, memory storage device and memory controlling circuit unit

A data reading method for a rewritable non-volatile memory module is provided. The method includes performing an error correction decoding operation on an user data stream according to an error checking and correcting (ECC) code to generate a first decoded data stream; searching uncorrectable sub-data units from decoded sub-data units of the first decoded data stream; selecting a target sub-data unit from the uncorrectable sub-data units; adjusting the target sub-data unit in the first decoded data stream to generate an adjusted user data stream; and re-performing the error correction decoding operation on the adjusted user data stream to generate a second decoded data stream; if the second decoded data stream has no error bit, transmitting the second decoded data stream as a corrected data stream to a host system.

Data reading method, memory control circuit unit and memory storage apparatus

A read voltage level estimating method, a memory storage device and a memory control circuit unit are provided. The method includes: reading a first region of a rewritable non-volatile memory module according to a first read voltage level to obtain a first encoding unit which belongs to a block code; performing a first decoding procedure on the first encoding unit and recording first decoding information; reading the first region according to a second read voltage level to obtain a second encoding unit which belongs to the block code; performing a second decoding procedure on the second encoding unit and recording second decoding information; and estimating and obtaining a third read voltage level according to the first decoding information and the second decoding information. Accordingly, a management ability of the rewritable non-volatile memory module adopting the block code may be improved.

Read voltage level estimating method, memory storage device and memory control circuit unit

A data reading method is provided. The data reading method includes receiving a read command from a host system; sending a first read command sequence to obtain a first data string from memory cells of a rewritable non-volatile memory module; performing a decoding procedure on the first data string to generate a decoded first data string; and, if there is an error bit in the decoded first data string, sending a second read command sequence to obtain a second data string from the memory cells, performing a logical operation on the decoded first data string and the second data string to obtain an adjusting data string, adjusting the decoded first data string according to the adjusting data string to obtain an adjusted first data string, and using a data string obtained after re-performing the decoding procedure on the adjusted first data string as the decoded first data string.

Data reading method, memory controlling circuit unit and memory storage device

A memory control circuit unit including a plurality of data randomizer circuits and a data selection circuit is provided. When a first data stream is received from a host system, the first data stream is input into the data randomizer circuits to respectively output a plurality of second data streams. The data selection circuit selects one of the second data streams as a third data stream according to contents of the second data streams, and the third data stream is programmed into a rewritable non-volatile memory module. Accordingly, data written into the rewritable non-volatile memory module can be effectively disarranged.

Memory control circuit unit, memory storage apparatus and data accessing method

A data programming method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first data and programming the first data into a first lower physical programming unit; receiving second data; in response to the second data to be programmed into a first upper physical programming unit corresponding to the first lower physical programming unit, performing a first data obtaining operation which does not include reading the first lower physical programming unit by using a default read voltage; and programming the second data into the first upper physical programming unit according to the third data obtained through the first data obtaining operation.

Data programming method, memory storage device and memory control circuit unit

A decoding method, a memory storage device and a memory controlling circuit are provided. The decoding method includes: sending a read command sequence configured to read the memory cells, so as to obtain a plurality of first verification bits; executing a first decoding procedure according to the first verification bits, and determining whether a first valid codeword is generated; if the first valid codeword is not generated, sending another read command sequence configured to obtain a plurality of second verification bits; calculating a total number of the memory cells conforming to a specific condition according to the second verification bits; obtaining a channel reliability message according to the total number; and executing a second decoding procedure according to the channel reliability message. Accordingly, a correcting ability of decoding may be improved.

Decoding method, memory storage device and memory controlling circuit unit

A data managing method, and a memory control circuit unit and a memory storage apparatus using the same are provided. The data managing method including: reading a first data stream from a first physical erasing unit according to a first reading command, wherein the first data stream includes first user data, a first error correcting code and a first error detecting code. The method also includes: using the first error correcting code and error detecting code to decode the first user data and determining whether the first user data is decoded successfully. The method further includes: if the first user data is decoded successfully, transmitting corrected user data obtained by correctly decoding the first user data to the host system in response to the first reading command.

Data managing method, memory control circuit unit and memory storage apparatus

A data processing method adapted for a rewritable non-volatile memory module is provided. The method includes receiving a first data stream and performing an error-correction encoding procedure on the first data stream to generate an original error checking and correcting (ECC) code corresponding to the first data stream. The method also includes converting the original ECC code into a second ECC code according to a second rearrangement rule, and the original ECC code is different from the second ECC code. The method further includes respectively writing the first data stream and the second ECC code into a data bit area and an error-correction code bit area of the same or different physical programming units in the rewritable non-volatile memory module.

Memory storage device, memory controller thereof, and method for processing data thereof

A data reading method for a rewritable non-volatile memory module is provided. The method includes applying a test voltage to a word line of the rewritable non-volatile memory module to read a plurality of verification bit data. The method also includes calculating a variation of bit data identified as a first status among the verification bit data, obtaining a new read voltage value set based on the variation, and updating a threshold voltage set for the word line with the new read voltage value set. The method further includes using the updated threshold voltage set to read data from a physical page formed by memory cells connected to the word line. Accordingly, storage states of memory cells in the rewritable non-volatile memory module can be identified correctly, thereby preventing data stored in the memory cells from losing.

Data reading method, and control circuit, memory module and memory storage apparatus and memory module using the same

A knee or elbow pad comprising an inverted U-shaped stable member and two trapezoidal curved movable members symmetrically combined with the stable member by means of rivets to function as pivots to permit the movable members to move to spread or contract in relation to the stable member so that the pad can bend or straighten to conform to the position of a knee or an elbow of a wearer when the knee or the elbow is bent or straightened.

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Kaohsiung, Taiwan

Tien-Ching Wang