Taiwan Semiconductor Manufacturing Comp. Ltd.

Tien-Chen Hu

Jih-Churng Twu

Mao-Lin Kao

Jiun-Rong Pai

Hsu-Shui Liu

Chen-Fa Lu

Hsiang-Yin Shen

Li-Jen Ko

Tro-Hsu Lin

Chun-Chin Huang

Jung-Sheng Hou

Pang-Yen Tsai

Ying-Ho Chen

Tsu Shih

Chung-En Kao

Jui-Ping Chuang

Chen-Peng Fan

Ming-Yi Lee

Sen-Shan Yang

Chih-Ming Hsieh

Hun Lin

Chien-Chang Lai

Feng-Chih Hsu

Chien-Hsien Lee

Da-Hsiang Chen

Tsen-Hsing Yi

Hong-Jin Pu

Zhi-Zan Zhuang

Tso-Hsu Lin

Wei-Cheng Ku

Chih-Nan Chuang

Kuo-Fu Chien

Cheng-Fang Chang

Jin-Churng Twu

Wen-Jin Lee

Keith Koai

Der-Yuan Hong

Jeng-Fang Chang

Hong-Chin Pu

A semiconductor processing station is provided. The semiconductor processing station includes a first platform, a second platform and a vacuum tunnel, wherein the first platform has a first load lock and a first plurality of chambers, and the second platform has a second load lock and a second plurality of chambers, and the vacuum tunnel connects the first and the second load locks.

Method for processing semiconductor wafer

Semiconductor processing station and method for processing semiconductor wafer

One or more techniques or systems for ultra-high vacuum (UHV) wafer processing are provided herein. In some embodiments, a vacuum system includes one or more cluster tools connected via one or more bridges. For example, a first cluster tool is connected to a first bridge. Additionally, a second cluster tool is connected to a second bridge. In some embodiments, the first bridge is configured to connect the second cluster tool to the first cluster tool. In some embodiments, the second cluster tool is connected to the first bridge, thus forming a 'tunnel'. In some embodiments, the second bridge comprises one or more facets configured to enable a connection to an additional process chamber or an additional cluster tool. In this manner, a more efficient UHV environment is provided, thus enhancing a yield associated with wafer processing, for example.

Ultra-high vacuum (UHV) wafer processing

A semiconductor process includes polishing a substrate with a slurry in an enclosure. Polishing the substrate is stopped. First mist is injected into the enclosure, such that the first mist has at least about 80% of saturation of a liquid or gaseous solvent in a carrier within the enclosure.

Chemical mechanical planarization apparatus

Chemical mechanical planarization methods

A system for cleaning a wafer. At least one first chuck roller is connected to a first roller base and includes a first annular groove. A second roller base opposes the first roller base. At least one second chuck roller is connected to the second roller base and includes a second annular groove. A sensing chuck roller is connected to the second roller base and includes a third annular groove corresponding to the first and second annular grooves. A cleaning member covers the third annular groove. A circumferential edge of the wafer is positioned in the first and second annular grooves and abuts the cleaning member. The first and second chuck rollers rotate the wafer, enabling the circumferential edge thereof to rub against the cleaning member.

System for cleaning a wafer

An electroplating anode including a substantially convex oxidizing surface for oxidation of metal atoms in a semiconductor wafer electroplating process. The electroplating anode of the present invention substantially prolongs the lifetime of the anode and contributes to the prevention of wafer contamination due to generation of potential wafer-contaminating precipitate particles during a wafer electroplating process.

Convex profile anode for electroplating system

A calibration wafer which is suitable for calibrating alignment of a transfer robot blade with respect to wafers in a loadlock chamber or input shuttle. The calibration wafer includes a circular wafer body on which is provided a pair of spaced-apart blade alignment lines which are used to properly align the transfer robot blade. The invention further includes a calibration kit for calibrating alignment of a polishing head with a pedestal, including a base plate for placement on the pedestal; a calibration plate for placement on the base plate; and a calibration circle provided on the calibration plate for aligning the polishing head with the pedestal.

Calibration wafer and kit

A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures.

Linear chemical mechanical polishing apparatus equipped with programmable pneumatic support platen and method of using

A tensioning assembly for a polishing belt on a linear chemical mechanical polishing apparatus. The tensioning assembly comprises first and second rollers which are operably engaged by respective air cylinders and exert a selected degree of downward tension on the lower run of the horizontal polishing belt. A third roller biased typically by a spring pushes upwardly on the lower run of the belt between the first and second rollers. Accordingly, the first and second rollers, in conjunction with the third roller, tension the belt on the apparatus to maintain optimum material removal rates and uniformity. The degree of tension exerted on the belt can be varied according to stretching of the belt resulting from prolonged use.

Belt tensioning assembly for CMP apparatus

A ventilated platen/polishing pad assembly for chemical mechanical polishing copper conductors on a semiconductor wafer is disclosed. The ventilated platen is constructed by a platen having a multiplicity of apertures through a thickness of the platen, and a polishing pad that has a multiplicity of apertures for fluid communication with the multiplicity of apertures in the platen such that a gas can flow through the ventilated platen and the ventilated polishing pad to mix with a polishing slurry solution dispensed on top of the polishing pad. When an oxidizing gas is mixed with the slurry solution, the mass transfer process during the chemical mechanical polishing can be improved and thus improving the polishing uniformity of the copper surface. The invention further discloses a method for chemical mechanical polishing copper conductors on a semiconductor wafer by dispensing a polishing slurry/oxidizing gas mixture onto a top surface of a polishing pad for engaging a wafer surface and thus improving the polishing uniformity and preventing corrosion or erosion of the fresh copper surface by the acidic or basic components contained in the slurry solution.

Ventilated platen/polishing pad assembly for chemcial mechanical polishing and method of using

A method and an apparatus for removing coating layers from the top of alignment marks on a wafer situated in a spin processor are described. The method may be carried out by first providing a spin process equipped with a rotatable wafer pedestal, then providing a wafer that has at least one alignment mark covered by a coating layer, mounting an edge ring on an outer periphery of the wafer pedestal, the edge ring has at least one tab section extending outwardly from an inner periphery of the edge ring, then positioning the wafer faced down and supported by an inert gas flow on the edge ring such that a narrow gap is formed between the tab section on the edge ring and the alignment marks and dispensing an etchant onto a backside of the wafer while rotating.

Method and apparatus for removing coating layers from alignment marks on a wafer

A linear chemical mechanical polishing apparatus equipped with a brush means and a solvent spray means for cleaning the polishing pad during a chemical mechanical polishing process is described. The brush means may be provided in a cylindrical, tubular shape equipped with bristle for cleaning the surface grooves on the polishing pad and thus, removing large contaminating particles to prevent the particles from scratching the wafer surface. The solvent spray means is used to spray a jet of solvent such as deionized water onto the brush means and the polishing pad for removing debris generated by the polishing process and the cleaning process.

Apparatus and method for cleaning the polishing pad of a linear polisher

Within a method for fabricating a microelectronic fabrication there is first provided a substrate having formed thereover a minimum of one microelectronic layer, where the minimum of one microelectronic layer is at least partially transparent to an incident radiation beam. There is then chemical mechanical polish (CMP) planarized the minimum of one microelectronic layer, while employing a chemical mechanical polish (CMP) planarizing method, to form from the minimum of one microelectronic layer a minimum of one chemical mechanical polish (CMP) planarized microelectronic layer. Within the method, a chemical mechanical polish (CMP) planarizing endpoint within the chemical mechanical polish (CMP) planarizing method with respect to the minimum of one chemical mechanical polish (CMP) planarized microelectronic layer is determined while employing the incident radiation beam incident upon the minimum of one microelectronic layer, in conjunction with a derivative of a property of a minimum of one reflected portion of the incident radiation beam reflected from the minimum of one microelectronic layer as the minimum of one microelectronic layer is chemical mechanical polish (CMP) planarized to form the minimum of one chemical mechanical polish (CMP) planarized microelectronic layer.

Chemical mechanical polish (CMP) planarizing method employing derivative signal end-point monitoring and control

A new method is provided for endpoint detection of the polishing of a copper surface. The amount of copper dioxide that is removed from the surface that is being polished is monitored by means of a laser beam that is reflected off the polishing pad that is used for the polishing operation. The reflected light beam is analyzed for color content, based on this analysis it can be determined at what time no more copper dioxide is present on the surface of the polishing pad, which is the time that the process of removing copper from the surface that is being polished is complete. The polishing process is stopped at that time.

Method for a copper CMP endpoint detection system

Growing community of inventors

Ping-Tung, Taiwan

Tien-Chen Hu