Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Trixell

Tiemen Poorter

Walter Ruetten

Martin John Powell

Cornelis D Hartgring

Lex Alving

Hugo Johan Cornelissen

Ronald Dekker

Toru Sakai

Coen Adrianus Verschuren

Michael Overdick

Vincent Adrianus Henneken

Heidrun Steinhauser

Rainer Kiewitt

Nicolaas Johannes Anthonius Van Veen

Tewe Hiepke Heemstra

Augusto Nascetti

Johannes K Colditz

Jan Dikken

Timon Rutger Grob

Gerardus Franciscus Cornelis Maria Lijten

Petrus A Nuijten

August L Simons

Johnny W Van Der Velden

Anthony Roy Franklin

Jorrit Jorritsma

Sipke Jacob Bijlsma

Michael Johan Ferdinand Marie Ter Laak

Henricus F Diebels

Frank P Behagel

Thomas Frederik Buss

Peter Bas Anton Wolfs

Martinus Maria Sens

Johannes H M Van Roosmalen

Gerardus F C M Lijten

Martinus M Sens

Michael J F M Ter Laak

An X-ray detector () includes a light detection arrangement () such as a CMOS photodetector, a scintillator layer () such as a CsI:Tl layer, a reflector layer () and a light emission layer () interposed between the scintillator layer () and the reflector layer (). The light emission layer () may include an OLED and may have a thickness of less than 50 &#x3bc;m. Thereby, a sensitivity and resolution of the X-ray detector may be improved.

X-ray detector with improved spatial gain uniformity and resolution and method of fabricating such X-ray detector

A detector tile and a detector panel arrangement for providing a seamless detector surface with a continuous pixel array and with a reduced gap appearance includes a detector tile having a flat primary substrate and a surface layer with a circuitry arrangement. The surface layer is arranged on a front side of the primary substrate covering the primary substrate. The circuitry arrangement includes detector pixels providing a pixel array, where a connection opening is provided in the surface layer and the flat primary substrate at least at one edge of the detector tile. The connection opening is leading from the surface layer to the rear of the substrate for guiding electrical connection elements between the front side and a rear of the detector tiles. The connection openings on opposing edges of the detector tile alternate, and the connection openings on adjacent edges of detector tiles alternate.

Seamless tiling to build a large detector

According to an embodiment of the invention, signals coming from a number of pixels or sub-pixels are compared and those signals from pixels or sub-pixels, which are substantially brighter than the other pixels in the comparison, are excluded from contributing to the output signal, to suppress direct detection events in X-ray detectors. For this an X-ray detector apparatus () can comprise: &#x2014;an array () of pixel arrangements (), &#x2014;each pixel arrangement () comprising at least one radiation collection device () for converting incident radiation into a collection device signal, &#x2014;switching arrangements () for providing to respectively one output element () a signal derived from the collection device signals of a plurality of radiation collection devices () of at least one pixel arrangement ().

Suppression of direct detection events in X-ray detectors

A tiled detector assembly () and a method for making a tiled radiation detector () is described. The innovative feature of this method is that the xyz misalignment of the detector tiles (), the origin of various image artifacts, can be significantly reduced by accurate sizing and alignment of the detector tiles (). Consequently, image quality, yield and reliability of as-produced tiled radiation detectors are considerably improved.

Assembly method for a tiled radiation detector

An x-ray detector and its pixel circuit are described, that allow to cover a large dynamic range with automatic selection of the sensitivity setting in each pixel, thus providing improved signal to noise ratio with all exposure levels. X-ray detectors are required to cover a large dynamic range. The largest exposure determines the required pixel capacitance. However, a large pixel capacitance gives a bad signal to noise ratio with small exposures e.g. in the dark parts of the image. This invention disclosure describes several approaches to provide automatic sensitivity selection in the pixels. This ensures that low signals are stored in a small capacitor or read out with a high sensitivity with corresponding good signal to noise ratio, while larger signals are stored in larger capacitors or are read out with lower sensitivity so that no information is lost.

High dynamic range X-ray detector with improved signal to noise ratio

The present invention generally refers to computed tomography (CT) based imaging systems and, more particularly, to a fast 3D tomosynthesis scanner apparatus and CT-based method without focal spot motion during continuous tube movement around an object of interest (O) or tissue region (M) to be examined (herein also referred to as 'object'), which may advantageously be used in cone-beam volume CT mammography imaging so as to avoid motion artifacts and blurring effects.

Fast tomosynthesis scanner apparatus and CT-based method based on rotational step-and-shoot image acquistion without focal spot motion during continuous tube movement for use in cone-beam volume CT mammography imaging

An Y-ray detector apparatus comprises an array of detector pixels arranged into a plurality of sub-arrays. The pixels in each sub-array share a common dose sensing output provided to a dose sensing output conductor which extends to a periphery of the pixel array. The dose sensing output conductor for one sub-array of pixels passes through the area occupied by another sub-array of pixels, which can lead to unwanted cross talk. The invention provides a plurality of additional screening electrodes, with a screening electrode substantially adjacent the dose sensing output conductor for each sub-array of pixels. These screening electrodes reduce cross talk between the dose sensing output and other pixel electrodes. In another arrangement, each pixel further comprises a pixel electrode for each pixel formed at an upper region of the array, and the dose sensing output conductors are formed at a lower region of the array. An intermediate conductor layer is then provided which overlaps the dose sensing output conductors for other sub-arrays of pixels and which pass through the area occupied by the sub-array of pixels.

X-ray image detector

A radiation detector comprises an electrode structure, a planarising layer being disposed over the electrode structure and a protective stack which covers the planarising layer. The planarising layer evens out substantial differences between levels of the electrode structure above the substrate on which the electrode structure is disposed. Consequently, cracks, weak spots and other defects in the protective stack are to a large extent avoided. Because the planarising layer covers essentially the entire electrode structure, practically all sources of defects, notably cracks, in the protective stack are avoided.

Radiation detector

In the manufacturing process of color display tubes with a dotted screen pattern, to form the screen ( ), a segmented lens ( ) is used for exposing the display window ( ) in order to apply a structure of a black matrix layer and a layer with electroluminescent material to it. Principally, a segmented lens ( ) gives rise to a phenomenon that is called facet marking; this is a result of the fact that the images of consecutive facets ( ) of the lens on the screen ( ) are disjunct or partly overlap, giving dark lines ( ) or bright lines ( ). In present day color display tubes&mdash;especially for use as computer monitors&mdash;it is getting more and more important to reduce facet marking as far as possible. It is proposed to manufacture the segmented lens ( ) according to a new process in which the mold ( ) for the manufacture of said segmented lens is significantly changed. In the new process, the poles ( ) for the mold ( ) are stacked by placing them with cylindrical projections ( ) into apertures ( ) of the carrier plate ( ). This prevents leaning poles ( ), which result in errors in the inclination of the facets ( ). This method of manufacturing the mold ( ) makes it possible to decrease the facet size and significantly improve the facet marking in color display tubes.

Method of producing a segmented lens and a screen for a color display device

In an X-ray image intensifier tube an entrance section is optimized in respect of image quality, optical aberrations and efficiency. To achieve this, notably in order to avoid photocathode charging phenomena, a separating layer having an adapted electrical transverse conduction is provided. In order to reduce scattered radiation, an edge portion of the entrance screen is deactivated for relevant examinations. In order to increase efficiency, use is made of a double phosphor layer having different X-ray absorption properties. In order to compensate for vignetting a radial variation of the thickness or of the radiation properties of a separating layer or of the luminescent layer itself is used.

X-ray image intensifier tube with improved entrance section

A gate circuit includes an N-channel and a P-channel insulated gate field-effect transistor whose parallel-connected drain-source paths constitute an analog signal gate and a control circuit, connected to the respective gate electrodes, to turn on and/or turn off the two field-effect transistors. In order to handle signals whose voltage value is higher than the maximum permissible drain-source voltage in the on-state of the N-channel field-effect transistor, means are provided, for turning on the N-channel field-effect transistor at least at a drain-source voltage below a predetermined value. In an embodiment of the invention the means include delay means coupled to the control circuit for turning on the N-channel field-effect transistor with a delay relative to the P-channel field-effect transistor. In another embodiment of the invention the means include switching means arranged in series with the analog signal gate, for temporarily connecting the signal gate to at least one auxiliary voltage.

Gate circuit having increased voltage handling capability

A memory cell is read by first charging a pair of bit lines to given positive potentials and then raising the potential of a cell access line to render access transistors conductive. The cell supply voltage is sufficient to cause substantial hot-electron stress in the n-channel transistors of the cell if it were applied directly across their source-drain paths while they were conductive. However, a limit is imposed on the maximum positive potentials which are applied to the bit lines from the exterior, and on the minimum ratio of the sizes of the cell n-channel amplifier transistors to the sizes of the access transistors, taking into account the threshold voltages of the amplifier transistors, and as a result substantial hot-electron stress does not occur. Substantial hot-electron stress is also prevented during a write operation by arranging that this is effectively preceded by a read operation.

Static RAM having a precharge operation which exhibits reduced hot

A digital circuit with a 5 V power supply voltage in which NMOS transistors constructed in sub-micron technology are protected against excessive field strengths by means of additional transistors in order to prevent so-called 'hot carrier stress' for this purpose the additional transistors have a greater channel length and/or a higher threshold voltage.

Output buffer having reduced electric field degradation

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Eindhoven, Netherlands

Tiemen Poorter