Applied Materials, Inc.

Apple Inc.

Gan Systems Inc.

Tiefeng Shi

Keith A Miller

Gang Fu

Candy Yiu

Shilpa Talwar

John C Forster

Rongjun Wang

Kirankumar Neelasandra Savandaiah

Tza-Jing Gung

Feng Xue

Renu Whig

Ching-Yu Liao

Jianxin Lei

David Arditti Ilitzky

Seong-Youp Suh

Lei Zhou

Jingwen Bai

Sreenivas Kasturi

Shu-Ping Yeh

Ranganadh Karella

Eduardo Alban

Mustafa Akdeniz

Irena H Wysok

Halbert Chong

Zhiyong Wang

Sundarapandian Ramalinga Vijayalakshmi Reddy

Paul Wiener

Mark Edward Davis

Timo Huusari

Avinash Nayak

Bradley Alan Jackson

Daniel Tong

Philippe Auzas

Jonathan Byrne

Mengkun Ke

Rodrigo Aldana Lopez

David Gomez Gutierrez

Rafael De La Guardia Gonzalez

Leobardo Campos Macias

Embodiments provided herein generally include apparatus, plasma processing systems and methods for dynamic impedance matching across multiple frequency bands of a power source. An example method includes amplifying a broadband signal, splitting the amplified broadband signal across a plurality of channel paths coupled to an impedance matching network, and adjusting at least one first impedance associated with the impedance matching network to achieve a second impedance within a threshold value based at least in part on feedback associated with the broadband signal. The impedance matching network includes a plurality of impedance matching circuits coupled to plasma excitation circuitry, and each of the impedance matching circuits is coupled to a different path of the plurality of channel paths and an output node.

Broadband supply circuitry for a plasma processing system

Methods, apparatuses and systems for detecting and managing arc events during a plasma chamber process include receiving impedance data measured during a plasma chamber process, analyzing the impedance data to determine if an arc event is occurring during the plasma chamber process, and if it is determined that an arc event is occurring, an action is taken to suppress an arc of the arc event. In some instances, a machine learning model that has been trained to recognize when an arc event is occurring from received measurement data is used to determine if an arc event is occurring.

Arc management algorithm of RF generator and match box for CCP plasma chambers

High efficiency resonator coils for large gap resonant wireless power transfer (WPT), and a coil design methodology are disclosed. Resonator coils comprise a coil topology defined by coil parameters in which turn dimensions, such as trace widths and spacings of each turn, are configured to reduce or minimize a variance of the z component of magnetic field, over an area of a charging plane at a specified distance, or distance range, from the coil. A Tx resonator coil comprises a capacitor arrangement of tuning and network-matching capacitors for improved coil-to-coil efficiency and end-to-end WPT system performance, e.g. for applications such as through-wall WPT, in the range of tens of watts to at least hundreds of watts. Planar resonator coil topologies are compatible with fabrication using low cost PCB technology, e.g. with multi-layer metal, to reduce losses and improve thermal performance.

High efficiency resonator coils for large gap wireless power transfer systems

An unmanned aerial vehicle can be configured to adjust a beam direction, provide path information, act as a base station, act as a cluster head, include an improved directional antenna or array of directional antennas, communicate in a collaboration using belief propagation, receive communications from a serving station aiding in navigation or improved signal performance, or the like.

Unmanned aerial vehicle communication

Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

Methods and apparatus for processing a substrate

Methods and apparatus for processing a substrate are provided herein. For example, a matching network for use with a plasma processing chamber comprises an input configured to connect to a power source, an output configured to connect to the plasma processing chamber, a V/I sensor connected between the input of the matching network and an output of the power source, a load capacitor connected in parallel with at least one capacitor connected in series with a load switch, a tuning capacitor connected in series with at least one capacitor connected in parallel with a tuning switch, and a multiple level pulsing phase/magnitude module connected to the V/I sensor and to a multiple level pulsing synchronization switch driver connected to each of the load switch and the tuning switch for activating at least one of the load switch and the tuning switch in response to a control signal, which is based on a V/I sensor measurement, received from the power source.

Growing community of inventors

San Jose, CA, United States of America

Tiefeng Shi