Ois Optical Imaging Systems, Inc.

Lg Philips Lcd Co., Inc.

Lg Display Co., Ltd.

Guardian Industries Corporation

Tieer Gu

Willem Den Boer

John Z Zhong

John Z Z Zhong

Young Hee Byun

Steven Aggas

John ZZ Zhong

This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

Method of making a TFT array with photo-imageable insulating layer over address lines

A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant &#x2208; (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 &#x3bc;m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance Cin the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

LCD with increased pixel opening sizes

A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant &#x3b5; (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 &#x3bc;m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance Cin the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant &egr; (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 &mgr;m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance C in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant &isin; (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 &mgr;m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance C in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

Method of making an array of TFTs having an insulation layer with a low dielectric constant

This invention is related to an active matrix liquid crystal display (AMLCD) or an X-ray imaging device having a high aperture ratio, and method of making same. The imager or display has an increased aperture ratio because electrodes are formed over dual insulating layers so as to overlap portions of the array address lines and/or TFTs. Both the manufacturability and capacitive crosstalk of the device are improved due to the use of a photo-imageable organic insulating layer between the pixel electrodes and the address lines. An intermediate inorganic insulating layer is provided between the photo-imageable organic insulating layer and the overlapped TFTs in order to prevent the organic insulating layer from directly contacting semiconductor material in the TFTs thereby reducing potential voltage swings.

Method of making an LCD or X-ray imaging device with first and second insulating layers

A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant &egr; (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 &mgr;m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance C,in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

TFT array with photo-imageable insulating layer over address lines

A method of manufacturing a PIN (positive-intrinsic-negative) diode structure includes depositing an insulation or dielectric layer over the bottom PIN diode electrodes, prior to depositing the PIN semiconductor layers. The insulation layer results in a PIN diode structure with reduced leakage current, reduced RIE (reactive ion etching) chamber contamination, the reduction or elimination of post RIE processing, improved yields, and/or expands the potential materials that may be used for the bottom electrode. A corresponding PIN diode structure is also disclosed. The resulting PIN diode structures may be used in, for example, LCD (liquid crystal display) and solid state imager applications.

Image sensor or LCD including switching pin diodes

Method of making an image sensor or LCD including switching pin diodes

A liquid crystal display (LCD) includes a multilayer black matrix system for improving the contrast of displayed images. The black matrix system includes at least one layer of a material that has variable amounts of chemical elements. By, for example, varying 'x' and 'y' in SiO.sub.x N.sub.y, the refractive index 'n' of adjacent SiO.sub.x N.sub.y layers can be slowly varied through the thickness of the system so that the refractive index adjacent the substrate substantially matches that of the substrate and so that there are no overly large refractive index differences between adjacent layers in the system. This reduces light reflections off of the black matrix system.

Liquid crystal display with SiO.sub.x N.sub.y inclusive multilayer black

This invention is related to a radiation imager (e.g. x-ray imager) and method of making same. An insulating material having a low dielectric constant is provided in areas of overlap between collector electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The TFT array and corresponding imager are made in certain embodiments by coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing storage capacitor collecting electrodes over the insulating layer so that the collecting electrodes contact TFT source electrodes through the contact vias. The resulting imager has an improved signal-to-noise ratio due to the low dielectric constant of the insulating layer.

Growing community of inventors

Troy, MI, United States of America

Tieer Gu