Wisconsin Alumni Research Foundation

Tianxiang Nan

Chang-Beom Eom

Trevor Jeffrey Anderson

Jonathon Schad

Voltage-controlled spin field effect transistors ('spin transistors') and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a spin injection contact to a spin detection contact through a multiferroic antiferromagnetic channel via magnon propagation. The spin current transport is modulated by the application of a gate voltage that increases the number of domain boundaries the multiferroic antiferromagnetic material.

Spin transistors based on voltage-controlled magnon transport in multiferroic antiferromagnets

Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.

Non-collinear antiferromagnets for high density and low power spintronics devices

Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spin-orbit coupling (SOC) to produce spin-orbit torque in adjacent ferromagnetic materials via a strong spin-Hall effect. Spin-orbit torque can be generated by the devices with a high efficiency, even at or near room temperature.

Growing community of inventors

Madison, WI, United States of America

Tianxiang Nan