Samsung Electronics Co., Ltd.

University of Pennsylvania

Tianshuo Zhao

Eun Joo Jang

Tae Gon Kim

Cherie Renee Kagan

Nuri Oh

Christopher Bruce Murray

Christopher J Murray

A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes:

Quantum dots and production method thereof

An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

Electronic device and production method thereof

Growing community of inventors

Philadelphia, PA, United States of America

Tianshuo Zhao