Beijing Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Beijing Boe Sensor Technology Co., Ltd.

Boe Technologies Group Co., Ltd.

Tiansheng Li

Zhenyu Xie

Shaoying Xu

Changjiang Yan

Cheng Li

Lin Zhou

Shoujin Cai

Jing Li

Jie Zhang

Chuncheng Che

Feng Liu

Yingzi Wang

Xiaohui Jiang

Jin Cheng

Lijun Mao

Dexi Kong

Ziran Liu

Xu Chen

Jian Nan Guo

Wenyu Zhang

Kunjing Chung

Zongmin Tian

Yuekai Gao

Jingjie Su

Zhenyu Hao

Disclosed are a detection substrate and a detection apparatus. The detection substrate includes: a base substrate; a plurality of pixel drive circuits; a first insulating layer, where the first insulating layer includes a plurality of first through holes; and a plurality of photosensitive devices, where each photosensitive device includes a first electrode, a photoelectric conversion layer and a second electrode, which are arranged in a stacked manner, the first electrode includes a body portion for carrying the photoelectric conversion layer, and a protruding portion, which extends from the body portion to cover the first through hole, the protruding portion is electrically connected to the pixel drive circuit by means of the first through hole, and an orthographic projection of the photoelectric conversion layer on the base substrate and an orthographic projection of the first through hole on the base substrate are provided side by side.

Detection substrate and detection apparatus

A flat panel detector is provided, which includes a base substrate and a plurality of detection regions arranged in an array on the base substrate, where each detection region is successively provided with a photosensitive sensor and an optical structure along a direction away from the base substrate; the optical structure includes a condensing unit and a light filtering unit, where the condensing unit is used for receiving the near-infrared light and ambient light emitted by the laser light source and performing condensing, and the light filtering unit is configured to shield the ambient light and transmitting the near-infrared light; a photosensitive sensor which includes an amorphous silicon photodiode and a thin film transistor, where the amorphous silicon photodiode is configured to convert the near-infrared light transmitted by the light filtering unit into an electrical signal.

Flat panel detector and display device

A touch substrate, a display apparatus and a display system are provided. By rearranging and distributing transistors in each shift register, the number of transistors in a lateral direction is less than that of transistors in a longitudinal direction. That is a circuit structure of the shift register is designed to extend longitudinally, so that a size of the shift register in the lateral direction can be reduced, a narrow frame design is realized, and seamless splicing is favorably realized in a large-sized display panel.

Touch substrate, display apparatus and display system

A touch substrate, a display apparatus and a display system are provided. The touch substrate includes a base substrate including a photosensitive region; a plurality of photosensitive pixels in an array in the photosensitive region, each photosensitive pixel includes one non-visible light sensor, and a ratio of a side length of each photosensitive pixel to a distance between the non-visible light sensors of two adjacent photosensitive pixels is in a range from 25:24 to 12:11; and a plurality of bias lines on a side of the plurality of non-visible light sensors away from the base substrate, the plurality of bias lines include a plurality of first bias lines and a plurality of second bias lines crossing with each other, and at least one of the plurality of first bias lines and the plurality of second bias lines is electrically connected to each non-visible light sensor.

Provided is a pixel sensing circuit, including a signal generation sub-circuit, a reset sub-circuit, an amplification sub-circuit, and a read sub-circuit. The reset sub-circuit is configured to provide a signal of a first power supply line to a first node under control of a reset signal line. The signal generation sub-circuit is configured to detect a light signal and convert the detected light signal into an electrical signal. The amplification sub-circuit is configured to provide an amplified electrical signal to a second node according to a signal provided by a second power supply line and under control of the first node. The read sub-circuit is configured to output the amplified electrical signal to a signal read line under control of a scan signal line.

Pixel sensing circuit, driving method thereof, detection panel, and electronic device

A sample testing apparatus for characterizing at least one target molecule in a testing sample includes a substrate and at least one detection device over the substrate. Each detection device includes a plurality of electrodes, a plurality of data lines, and a probe. Each electrode is configured, upon reaction of the probe with one of the at least one target molecule, to sense an electrical signal, and then to transmit the electrical signal via the one data line. Each data line includes a first film layer and at least one other film layer disposed over the first film layer. The first film layer can be at a substantially same layer, and have a first composition substantially same, as the electrodes. One or more of the at least one other film layer can have a composition having a relatively lower electric resistance than the first composition.

Sample testing apparatus, manufacturing method thereof, and sample testing method

A medical detection substrate and a manufacturing method thereof, a medical detection chip and a medical detection system are provided. The medical detection substrate includes: a substrate, and a detection unit on the substrate; the detection unit includes two groups of test electrodes, the substrate includes a plurality of recessed portions, and the at least two groups of test electrodes are located in the plurality of recessed portions and spaced apart by insulation bank portions. The two groups of test electrodes are insulated and spaced apart by the insulation bank portions, so as to effectively avoid a transverse interference electric field to be generated between the two groups of test electrodes, thereby effectively improving the detection accuracy and sensitivity of the medical detection substrate, and providing a reliable basis for disease diagnosis.

Medical detection substrate and manufacturing method thereof, medical detection chip and medical detection system

A method for manufacturing a ray detector array substrate is provided, comprising: forming a thin film transistor, a first data line and a receiving electrode on a base substrate; forming a first passivation layer on the base substrate; forming a first via hole and a second via hole in regions of the first passivation layer corresponding to the first data line and the receiving electrode, respectively; forming a photoelectric conversion layer covering the first passivation layer on the base substrate, the first via hole and the second via hole being filled with a material of the photoelectric conversion layer; etching the photoelectric conversion layer to retain a first portion of the photoelectric conversion layer inside the first via hole, and a second portion of the photoelectric conversion layer above and corresponding to the second via hole.

Ray detector array substrate, manufacturing method thereof, and ray detector

The technical solution provides a touch display substrate, a fabrication method thereof, and a touch display device. The touch display substrate includes a conductive bridge () and a touch-control signal lead () formed over a base substrate (). The touch-control signal lead () is in contact with a first surface portion of the conductive bridge (). A passivation layer () is formed over the touch-control signal lead () and the conductive bridge (). The passivation layer () includes a via-hole () to expose a second surface portion of the conductive bridge (). A touch electrode () is formed over the passivation layer () and being connected to the conductive bridge (). Through the via-hole (), the touch electrode () is connected to the conductive bridge () and further connected to the touch-control signal lead ().

Touch display substrate, fabrication method and touch display device

The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.

Thin film transistor and manufacturing method thereof, array substrate, and display device

An array substrate includes a display region and a Gate driver On Array (GOA) region. In the GOA region, a gate metal electrode, a gate insulating layer, an active layer, a transition layer, and a source-drain metal electrode are formed in sequence from bottom to top, and a via hole is provided penetrating the transition layer, the active layer and the gate insulating layer, the source-drain metal electrode is electrically connected to the gate metal electrode through the via hole; and at an edge of the via hole, there is formed an angle opening upward at edges of the transition layer and the active layer. There are further disclosed a manufacturing method of the array substrate and a display device provided with the array substrate.

Array substrate and method for manufacturing the same, display device

A fabrication method includes preparing a base substrate, the base substrate including a pixel region and a region of gate on array (GOA); forming a pattern including a gate electrode and a pattern of an active layer on the base substrate, and forming a gate lead on the region of GOA, by a first patterning process; forming a pattern of a gate insulating layer by a second patterning process; forming a pattern including a source/drain electrode by a third patterning process; forming a pattern of a planarization layer by a fourth patterning layer; and forming a pattern including a pixel electrode by a fifth patterning layer. Here, the pattern including the gate electrode and the pattern including the active layer are formed by one patterning process, which can reduce the number of masks in the fabrication process of the array substrate, improve production efficiency and save the cost.

Array substrate, fabrication method thereof and display device

A pixel array structure and manufacturing method thereof, an array substrate and a display device are provided. The manufacturing method of the pixel array structure includes: forming a doped active layer over an active layer, the doped active layer having a portion with a larger thickness and a portion with a smaller thickness; forming a source/drain metal layer on the doped active layer and the active layer; conducting an etching process on the source/drain metal layer, so as to form a source electrode and a drain electrode, one of which partially covers the portion of the doped active layer with a larger thickness; conducting an etching process on the doped active layer and the active layer in a region between the source electrode and the drain electrode, forming an optimized channel. With the manufacturing method, the on-state current of a channel of a thin film transistor can be raised.

Pixel array structure having doped active layer with uneven thickness and manufacturing method thereof, array substrate and display device

An etching time detection means and an etching time detection method for an etching device. The detection means comprises: a light wave emitter fixed on one substrate of the etching device, a light wave receiver fixed on another substrate and opposed to the light wave emitter, a detection system communicated with the light wave emitter and the light wave receiver for receiving light intensity signals and calculating etching time. With the detection means and the detection method, the automatical detection of etching time can be achieved and the deviation caused by visual observation can be effectively avoided.

Etching time detection means and method for etching device

A manufacture method of a via hole for a display panel, a manufacture method of a display panel, and a display panel are provided. During forming the via hole, a top film layer in an area to be formed with a via hole over a circuit pattern is etched under a first etching condition according to a slope angle as required; and a remaining portion in the area to be formed with a via hole is etched under a second etching condition according to a selection ratio as required, so as to form the via hole finally. A problem in one-step etching process that the slope angle and the selection ratio cannot be set flexibly is avoided.

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Beijing, China

Tiansheng Li