Advanced Technology Materials, Inc.

Entegris, Inc.

Versum Materials Us, LLC

Air Products and Chemicals, Inc.

Tianniu Chen

Chongying Xu

Thomas H Baum

Jeffrey F Roeder

Bryan Clark Hendrix

William Hunks

Matthias Stender

Philip S H Chen

Wen Dar Liu

William Jack Casteel, Jr

Yi-Chia Lee

Gregory T Stauf

Thomas M Cameron

Ziyun Wang

Seiji Inaoka

Michael B Korzenski

Gene Everad Parris

Ping Jiang

Madhukar Bhaskara Rao

Steven M Bilodeau

Aiping Wu

Melissa A Petruska

Rajiv Krishan Agarwal

Laisheng Sun

Leah Maylott

Adrien Lavoie

Emanuel Israel Cooper

Raymond Nicholas Vrtis

Joseph D Sweeney

Harsono S Simka

Oleg Byl

Peng Zhang

Robert E Kaim

Ravi Kumar Laxman

Juan E Dominguez

Ying Tang

Scott L Battle

Sharad N Yedave

Karl E Boggs

Richard S Ray

Jeffrey A Barnes

Weimin Li

Alexander S Borovik

Steven Lippy

Laura M Matz

Brenda Faye Ross

Kim Van Berkel

George Mirth

Lili Wang

James J Mayer

Gang Chris Han-Adebekun

Nicole E Thomas

Kathleen Esther Theodorou

Mark Richard Brown

Thomas Mebrahtu

Randy Li-Kai Chang

Hsiu Mei Chen

Ryback Li Chang Lo

Ling-Jen Meng

Edward Chia Kai Tseng

William Jack Casteel Jr

Jr William Jack Casteel

Jeffrey R Roeder

Yi-chia Lee

Jhih Kuei Ge

Philip SH Chen

A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.

Composition comprising three alkanolamines and a hydroxylamine for removing etch residues

Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Silicon implantation in substrates and provision of silicon precursor compositions therefor

Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.

Etching solution for tungsten and GST films

Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.

TiN hard mask and etch residue removal

A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.

Etching compositions and methods for using same

Formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue comprise an amine salt buffer, a non-ambient oxidizer, and the remaining being liquid carrier includes water and non-water liquid carrier selected from the group consisting of dimethyl sulfone, lactic acid, glycol, and a polar aprotic solvent including but not limited to sulfolanes, sulfoxides, nitriles, formamides and pyrrolidones. The formulations have a pH &#x3c;4, preferably &#x3c;3, more preferably &#x3c;2.5. The aqueous formulations having water as liquid carrier and semi-aqueous formulation having water and non-polar aprotic solvent(s) further contain acidic fluoride. The formulations offer high titanium nitride etch rates while provide excellent compatibility towards W, AlN, AlO, and low k dielectric materials. The formulations may comprise weakly coordinating anions, corrosion inhibitors, and surfactants. Systems and processes use the formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue.

Selectively removing titanium nitride hard mask and etch residue removal

A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R'NH, wherein R&#x2032; is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer species; optionally, a fluoride ion source; and optionally, a metal chelating agent.

Stripping compositions having high WN/W etching selectivity

It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 &#x3bc;m, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith.

Photoresist cleaning composition used in photolithography and a method for treating substrate therewith

Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.

Composition for treating surface of substrate, method and device

TiN hard mask and etch residual removal

Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NHOH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.

Etchant solutions and method of use thereof

A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

Composition and process for selectively etching metal nitrides

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (SiN), and a method of depositing the silicon precursors on substrates using low temperature (e.g., &#x3c;550&#xb0; C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module.

Apparatus and method for stripping solder metals during the recycling of waste electrical and electronic equipment

Growing community of inventors

Rocky Hill, CT, United States of America

Tianniu Chen