Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Boe Technology Groupco., Ltd.

Tianmin Zhou

Lizhong Wang

Wei Yang

Ce Ning

Rui Huang

Hehe Hu

Nianqi Yao

Jipeng Song

Guangcai Yuan

Xin Yang

Fengjuan Liu

Liping Lei

Xinhong Lu

Shuilang Dong

Yunping Di

Binbin Tong

Tao Yang

Zhengliang Li

Kun Zhao

Jie Huang

Dapeng Xue

Zhaohui Qiang

Xiaochun Xu

Wei Liu

Xianqin Meng

Fuqiang Li

Zhenyu Zhang

Pengxia Liang

Zheng Fang

Chenyang Zhang

Hui Guo

Ke Wang

Jiahui Han

Jiushi Wang

Huili Wu

Jin Fang Yang

Jiayu He

Zhen Zhang

Ning Dang

Chengfu Xu

Yupeng Gao

Weiting Peng

Li Qiang

Xiaming Zhu

Qiuli Wang

Yu Wen

Zhongpeng Tian

Feihu Zhou

Wenhua Wang

An array substrate and a display panel, relating to the technical field of display. The array substrate includes a base substrate, and a thin film transistor group which is provided on one side of the base substrate and includes at least two thin film transistors, the thin film transistors being stacked in a direction perpendicular to the base substrate.

Array substrate and display panel

The present application provides an array substrate, a manufacturing method for the same, and a display panel. The array substrate includes a display area and a non-display area connected to the display area, and the display area includes a plurality of sub-pixels arranged in an array. The non-display area includes at least one polysilicon transistor, each of the sub-pixels includes an oxide transistor and a pixel electrode. A gate of the oxide transistor as well as a first electrode and a second electrode of the polysilicon transistor are arranged in a same layer; an active layer of the oxide transistor and the pixel electrode are arranged in a same layer, and are in contact with each other. The active layer of the oxide transistor includes an oxide semiconductor material, and the pixel electrode includes an oxide conductor material.

Array substrate and manufacturing method for the same, display panel

A thin film transistor includes a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer. The active layer includes a channel layer and at least one channel protection layer; a material of each of the channel layer and the at least one channel protection layer is a metal oxide semiconductor material. The at least one channel protection layer is a crystallizing layer, and metal elements of the at least one channel protection layer include non-rare earth metal elements including In, Ga, Zn and Sn.

Thin film transistor, semiconductor substrate and X-ray flat panel detector

A displaying substrate and a displaying device. The displaying substrate comprises a flexible base plate; a first auxiliary electrode arranged on one side of the flexible base plate, the first auxiliary electrode being connected with a first power cord; a pixel unit arranged on a side of the flexible base plate away from a first metal layer, the pixel unit comprising: thin-film transistors arranged on the side of the flexible base plate away from the first metal layer, an insulation layer and a second auxiliary electrode, the second auxiliary electrode being connected with a second power cord, wherein the plurality of thin-film transistors comprise a drive transistor, the drive transistor has a source connected with the first auxiliary electrode and a drain connected with a first electrode of a light emitting device, a second electrode of the light emitting device is connected with the second auxiliary electrode.

Displaying substrate for preventing short circuit between auxiliary electrodes, and displaying device using the same

The present disclosure provides a display substrate, a display panel and a display apparatus. The display substrate includes a base substrate; a transistor, located on the base substrate, and including an active layer; and a data line, located between the active layer and the base substrate; the data line is connected with the active layer, and an orthographic projection of the active layer on the base substrate is located in an orthographic projection of the data line on the base substrate.

Display substrate, display panel and display apparatus

A displaying base plate and a manufacturing method thereof, and a displaying device. The displaying base plate includes a substrate, and a first electrode layer disposed on one side of the substrate, wherein the first electrode layer includes a first electrode pattern; a first planarization layer disposed on one side of the first electrode layer that is away from the substrate, wherein the first planarization layer is provided with a through hole, and the through hole penetrates the first planarization layer, to expose the first electrode pattern; and a second electrode layer, a second planarization layer and a third electrode layer that are disposed in stack on one side of the first planarization layer that is away from the substrate, wherein the second electrode layer is disposed closer to the substrate, the second electrode layer is connected to the first electrode pattern and the third electrode layer.

Displaying base plate and manufacturing method thereof, and displaying device

The present disclosure provides a thin film transistor, a GOA circuit and an array substrate, the thin film transistor including a source electrode, including a source electrode wiring and a plurality of source electrode branches; a drain electrode, including a drain electrode wiring and a plurality of drain electrode branches; a gate; a semiconductor layer including a plurality of semiconductor branches; a plurality of source electrode branches. The plurality of drain electrode branches are in contact with the plurality of semiconductor branches and are divided into a plurality of cells; the source electrode wiring and the drain electrode wiring are arranged in a parallel and spaced apart, and the number m of one of the source electrode wiring and the drain electrode wiring is an integer greater than or equal to 2, and the number n of the other is an integer greater than or equal to 1.

Thin film transistor having a semiconductor layer comprising a plurality of semiconductor branches

The present disclosure relates to an OLED display panel and display device. The OLED display panel includes: a display area, a bending area and a bonding area for bonding a circuit board, wherein the display panel further includes: a base substrate; a first semiconductor pattern on the base substrate; a first insulating layer group on the first semiconductor pattern; a second semiconductor pattern on the first insulating layer group; a second insulating layer group on the second semiconductor pattern; first via holes in the first insulating layer group and the second insulating layer group; second via holes in the second insulating layer group, wherein the display panel further includes: a first groove located in the bending area and having a depth substantially identical to that of the first via holes; and a metal trace, connecting a trace in the display area to the circuit board.

OLED display panel and display device

An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

Oxide thin film transistor, method for manufacturing the same and display device

The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

Thin film transistor and method for manufacturing the same, array substrate and display device

A thin film transistor, a method for manufacturing the same and a display device are disclosed, the thin film transistor includes: a first electrode, a second electrode, an active layer and a flexible conductive layer located on a substrate, one of the first electrode and the second electrode is a source, and the other thereof is a drain; the active layer is electrically coupled with the first electrode, and an orthographic projection of the active layer on the substrate is within an orthographic projection of the first electrode on the substrate; the flexible conductive layer is located on a side of the active layer away from the first electrode, and electrically couples the active layer with the second electrode.

Thin film transistor and method for manufacturing the same, display device

The present disclosure provides an array substrate, an electronic device and a manufacturing method of the array substrate. The array substrate includes a base substrate, and a first transistor and a second transistor on the base substrate, a first electrode of the first transistor being connected to a second electrode of the second transistor; the array substrate further includes a photodiode including a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode, and the first electrode is electrically connected to a gate of the first transistor. In the arrangement, the first transistor and the second transistor are connected in series to form one control unit, and the uniformity and stability of the control unit are greatly improved.

Array substrate with light shielding, electronic device and manufacturing method of array substrate with light shielding

Provided are an array substrate and a manufacturing method thereof, the manufacturing method includes: forming a first active layer on a base substrate; forming a second active layer; forming a second gate on the second active layer; forming a first insulating layer covering the first active layer on the second gate; patterning the first insulating layer to form first via holes at both sides of the second gate to expose the second active layer; depositing a first metal layer in the first via holes and on the first insulating layer; patterning the first metal layer, removing a part of the first metal layer above the first active layer to expose the first insulating layer; etching the first insulating layer using the patterned first metal layer as a mask, forming second via holes above the first active layer to expose the first active layer; cleaning the exposed first active layer.

Manufacturing method of array substrate

An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.

Method of manufacturing oxide thin film transistor

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Beijing, China

Tianmin Zhou