Seagate Technology Incorporated

Tian Wei

Dimitar Velikov Dimitrov

Ming Sun

Dexin Wang

Venugopalan Vaithyanathan

Ivan Petrov Ivanov

Muralikrishnan Balakrishnan

Yang Dong

Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

Programmable metallization memory cell with planarized silver electrode

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Bloomington, MN, United States of America

Tian Wei