Virginia Tech Intellectual Properties, Inc.

Center for Innovative Technology

Tian Shi

Seshu B Desu

Chien-Hsiung Peng

Pradyot A Agaskar

The chemical vapor deposition of hydridospherosiloxane to generate films of SiO.sub.2 at low temperatures on substrates that cannot withstand high temperatures. The chemical vapor deposition process synthesized compounds with the general formula,

Production of films of SiO.sub.2 by chemical vapor deposition

Metal organic chemical vapor deposition (MOCVD) is used to form a layer of a metal oxide on the surfaces and within the pores of a porous ceramic material. The metal oxide is formed from one or more inexpensive metal organic precursors which permeate the pores of the substrate as a vapor. Surface reactions on the heated substrate convert the metal organic precursors to their metal oxide. The technique has particular utility in creating catalysts with very large surface areas and in providing a protective coating on ceramic materials that prevents or reduces damage from hostile environments. In a preferred embodiment, aluminum isopropoxide, [(CH.sub.3).sub.2 CHO].sub.3 Al, and titanium ethoxide, Ti(C.sub.2 H.sub.5 O).sub.4, are used simultaneously or successively as precursors to generate a Al.sub.2 TiO.sub.5 coating on a porous ceramic substrate such as SiC or porous refractory cement candle filters.

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Beijing, China

Tian Shi