Taiwan Semiconductor Manufacturing Comp. Ltd.

Tian Sheng Lin

Yi-Min Chen

Chiu-Hua Chung

Yi-Cheng Chiu

Hung-Chou Lin

Kuo-Ming Wu

Hong-Yang Chen

Jui-Chun Weng

Shiuan-Jeng Lin

Shyh-Wei Cheng

Hung-Lin Chen

Yu-Jui Wu

Albion Pan

Bob Sun

A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

Semiconductor device including a capacitor

A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.

Shielding structure for ultra-high voltage semiconductor devices

A method for manufacturing a metal-insulator-metal (MIM) capacitor with a top electrode that is free of sidewall damage is provided. A bottom electrode layer is formed with a first material. An inter-electrode dielectric layer is formed over the bottom electrode layer. A top electrode layer is formed over the inter-electrode dielectric layer and without the first material. A first etch is performed into the top electrode layer and the inter-electrode dielectric layer to form a top electrode. A second etch into the bottom electrode layer to form a bottom electrode. The present application is also directed towards a MIM capacitor resulting from performing the method.

Metal-insulator-metal (MIM) capacitor with an electrode scheme for improved manufacturability and reliability

Growing community of inventors

Yangmei, Taiwan

Tian Sheng Lin