Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Semiconductor Manufacturing International Corp.

Tian Shen Tang

Yao Zhou

Hao Ni

Tao Wang

Jiaxu Peng

Jia Xu Peng

Memory arrays and reading, programming and erasing methods of the memory arrays are provided. An exemplary memory array includes a plurality of memory columns. Each memory column has a plurality of flash memory cells. The memory columns are divided into at least two blocks. At least one source pull down column is disposed between the two adjacent blocks. Each source pull down column has a plurality of flash memory cells. A source of each flash memory cell in the source pull down column is coupled to sources of the flash memory cells of the plurality memory columns in a same row as the flash memory cell in the source pull down column to pull down a source of a selected flash memory cell to 0 V.

Memory array, and method for reading, programming and erasing memory array

A charge pump voltage regulator is provided. The charge pump voltage regulator includes a charge pump circuit, where an output terminal of the charge pump circuit outputs a stable voltage. The charge pump voltage regulator also includes a voltage divider circuit suitable to divide the stable voltage to output a divided voltage and a clock oscillator providing a drive clock signal for the charge pump circuit. In addition, the charge pump voltage regulator includes a first voltage comparator circuit suitable to output at least one of a first comparison result and a second comparison result. Further, the charge pump voltage regulator includes a logic control unit, where, when the charge pump voltage regulator operates in a standby mode, the logic control unit outputs a first control level to the clock oscillator according to the at least one of the first comparison result and the second comparison result.

Charge pump voltage regulator

A memory and a reference circuit calibration method are provided. The memory includes: a memory array including a plurality of memory cells; a reference circuit including a reference memory cell and a reference connection terminal, wherein the reference memory cell is a same as the memory cell; a calibration circuit including a calibration connection terminal, and a mirror circuit including a first mirror terminal and a second mirror terminal, wherein the first mirror terminal is connected to the reference connection terminal, and the second mirror terminal is connected to the calibration connection terminal; a clamp circuit, configured to set one of a voltage of the reference connection terminal and a voltage of the calibration connection terminal as a preset voltage and to set the other thereof as a comparison voltage; and a comparison circuit configured to input the comparison voltage and the preset voltage, and to output a comparison result.

Memory and reference circuit calibration method thereof

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Shanghai, China

Tian Shen Tang