Corning Incorporated

Tian Huang

Yuhui Jin

Garrett Andrew Piech

Daniel Ohen Ricketts

Tammy Lynn Petriwsky

Matthew Evan Wilhelm

Rachel Eileen Dahlberg

Prantik Mazumder

Sean Matthew Garner

Chad Byron Moore

Jingshi Wu

Scott Christopher Pollard

Philip Robert LeBlanc

Rajesh Vaddi

Chong Pyung An

Ekaterina Aleksandrovna Kuksenkova

Mandakini Kanungo

Ah-Young Park

En Hong

Ling Cai

Hongmei Hu

Daniel Wayne Levesque, Jr

Chukwudi Azubuike Okoro

Thomas Michael Castle

A method for inspecting a transparent workpiece comprises: directing light from an illumination source onto a plurality of defects formed in the transparent workpiece, wherein the plurality of defects extends in a defect direction, wherein the transparent workpiece comprises a first surface and a second surface; detecting a scattering image signal from light scattered by the plurality of defects using an imaging system, wherein an imaging axis of the imaging system extends at a non-zero imaging angle relative to the defect direction, wherein entireties of at least a subset of the plurality of defects are within a depth of field of the imaging system; and generating a three-dimensional image of at least one of the plurality of defects based on the scattering signal.

Apparatus and method for inspecting laser defect inside of transparent material

Methods of forming vias in a glass-based article by laser-damage-and-etch processes including etching solutions having positive charge organic molecules are disclosed. In some embodiments, a method of forming a via in a glass-based article includes forming a damage track through a bulk of the glass-based article extending from a first surface of the glass-based article to a second surface of the glass-based article, and applying an etching solution to the glass-based article to form the via. The etching solution includes at least one acid and a positive charge organic molecule. An etch rate at the first surface and the second surface is lower than an etch rate at the damage track.

Methods for etching vias in glass-based articles employing positive charge organic molecules

Silica-containing substrates including vias with a narrow waist, electronic devices incorporating a silica-containing substrate, and methods of forming vias with narrow waist in silica-containing substrates are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol % silica, a first surface, a second surface opposite the first surface, and a via extending through the silica-containing substrate from the first surface toward the second surface. The via includes a first diameter at the first surface wherein the first diameter is less than or equal to 100 μm, a second diameter at the second surface wherein the first diameter is less than or equal to 100 μm, and a via waist between the first surface and the second surface. The via waist has a waist diameter that is less than the first diameter and the second diameter such that a ratio between the waist diameter and each of the first diameter and the second diameter is less than or equal to 75%.

Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same

Disclosed herein are glass compositions that present several advantages over glasses and other materials currently used for redistribution layers for RF, interposers, and similar applications. The glasses disclosed herein are low cost, flat glasses that have high throughput for the laser damage and etching process used to create through glass vias (TGV). TGV generated using the silicate glasses and processes described herein have large waist diameters (D), which is a desirable feature with respect to producing glass articles such as interposers.

Silicate glass compositions useful for the efficient production of through glass vias

An article includes a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and at least one via extending through the substrate from the first major surface to the second major surface over an axial length in an axial dimension. The article also includes a metal connector disposed within the via that hermetically seals the via. The article has a helium hermeticity of less than or equal to 1.0&#xd7;10atm-cc/s after 1000 thermal shock cycles, each of the thermal shock cycle comprises cooling the article to a temperature of &#x2212;40&#xb0; C. and heating the article to a temperature of 125&#xb0; C., and the article has a helium hermeticity of less than or equal to 1.0&#xd7;10atm-cc/s after 100 hours of HAST at a temperature of 130&#xb0; C. and a relative humidity of 85%.

Hermetic metallized via with improved reliability

Silica-containing substrates including vias with a narrow waist, electronic devices incorporating a silica-containing substrate, and methods of forming vias with narrow waist in silica-containing substrates are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol % silica, a first surface, a second surface opposite the first surface, and a via extending through the silica-containing substrate from the first surface toward the second surface. The via includes a first diameter at the first surface wherein the first diameter is less than or equal to 100 &#x3bc;m, a second diameter at the second surface wherein the first diameter is less than or equal to 100 &#x3bc;m, and a via waist between the first surface and the second surface. The via waist has a waist diameter that is less than the first diameter and the second diameter such that a ratio between the waist diameter and each of the first diameter and the second diameter is less than or equal to 75%.

Articles and semiconductor packages that incorporate glass-based substrates are disclosed, as well as methods of forming thereof. An article includes a glass-based substrate comprising first and second major surfaces spaced a distance from and parallel to each other, and a tapered via extending through the substrate. The tapered via includes a cross section that is symmetrical about a plane that is between and equidistant to the first and second major surfaces of the glass-based substrate and an interior wall with a first tapered region and a second tapered region positioned between the first major surface and the plane. The respective slopes of the first and second tapered regions are constant and the slope of the first tapered region is not equal to the slope of the second tapered region.

Articles having vias with geometry attributes and methods for fabricating the same

Various embodiments are related to substrates having one or more well structures with a trapezoidal cylinder shaped through hole via extending from the bottom of the well structure though the substrate.

Assembly substrates including through hole vias and methods for making such

A method of forming a glass substrate includes providing a glass substrate having alumina, translating a pulsed laser beam on the glass substrate to form one or more pilot holes, contacting the glass substrate with an etching solution, and providing agitation. The etching solution has a pH from about 0 to about 2.0, and an etch rate is less than about 3 &#x3bc;m/min. A glass substrate is disclosed having a first surface and a second surface opposite the first surface in a thickness direction, and at least one hole penetrating the first surface, wherein the at least one hole has been etched by an etching solution. A greatest distance dbetween (1) a first plane that contacts the first surface in regions that do not have the at least one hole or a deviation in a thickness of the substrate surrounding the at least one hole and (2) a surface of the deviation recessed from the first plane is less than or equal to about 0.2 &#x3bc;m.

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Painted Post, NY, United States of America

Tian Huang