Macronix International Co., Ltd.

Tian-Cih Bo

Po-Hao Tseng

Feng-Min Lee

Ming-Hsiu Lee

Yu-Hsuan Lin

Yu-Yu Lin

A 3D search engine receives searches for application to word lines of a nonvolatile memory array. The engine uses two word lines per bit of information of the searches and two memory devices per bit of stored feature to search against, optionally enabling don't care and/or wildcard encoding. The engine uses respective bit lines of the nonvolatile memory array as respective matching lines for searching. Respective memory strings (e.g., NAND memory strings) of the nonvolatile memory array are usable to store respective data words, e.g., corresponding to features to search for. Respective pluralities of the memory strings are coupled in parallel to respective shared bit lines. Various encodings of features and searches enable exact, approximate, and range matching. The engine has applicability to comparing and sorting, in addition to searching in application areas such as artificial intelligence (AI) and big data.

Computing system and method of operation thereof

A memory device and an in-memory search method thereof are provided. The memory device includes a first memory cell block, a second memory cell block, at least one search memory cell pair, and a sense amplifier. The search memory cell pair includes a first search memory cell and a second search memory cell. The first search memory cell and the second search memory cell are respectively disposed in the first memory cell block and the second memory cell block. The first search memory cell and the second search memory cell respectively receive a first search voltage and a second search voltage. The first search voltage and the second search voltage are generated according to searched data. The sense amplifier generates a search result according to signals on a first bit line and a second bit line.

Memory device and in-memory search method thereof

A memory device is provided. The memory device includes channel layers, word lines, memory layers disposed between the channel layers and the word lines, and memory cells defined at cross-points of the channel layers and the word lines. The memory device is configured for performing a first operation for m times and a second operation for n times, and m is equal to or larger than n. In the first operation, a first electric field is produced in a portion of the memory layers. The word lines are configured for producing a second electric field in the second operation in the portion of the memory layers, and a field direction of the second electric field is different from a field direction of the first electric field.

Memory device and method for operating the same

A memory device and an in-memory search method thereof are provided. The in-memory search method includes: providing, in a first stage, a first voltage or a second voltage to a word line of at least one target memory cell according to a logical status of searched data, and reading a first current; providing, in a second stage, a third voltage or a fourth voltage to the word line of the at least one target memory cell according to the logical status of the searched data, and reading a second current; and obtaining a search result according to a difference between the second current and the first current.

A hybrid in-memory search (IMS) content addressable memory (CAM) cell includes: a first IMS CAM cell; and a second IMS CAM cell, coupled to the first IMS CAM cell. The first IMS CAM cell and the second IMS CAM cell are of different types. When the hybrid IMS CAM cell stores a storage data, the first IMS CAM cell stores a first part of the storage data and the second IMS CAM cell stores the storage data or a second part of the storage data.

Hybrid IMS CAM cell, memory device and data search method

A hybrid type content addressable memory for implementing in-memory-search and an operation method thereof are provided. The CAM includes a plurality of CAM strings and at least one sense amplifier circuit. Each of the CAM strings includes a plurality of CAM cells. The CAM cells store a plurality of existing data. The sense amplifier circuit is connected to the CAM strings. A plurality of search data are inputted to the CAM strings. A plurality of cell matching results obtained from the CAM cells in each of the CAM strings are integrated via an AND operation to obtain a string matching result. The string matching results obtained from the CAM strings are integrated via an OR operation.

Hybrid type content addressable memory for implementing in-memory-search and operation method thereof

A memory device for in-memory search is provided. The memory device includes a plurality of memory cells, and each of the memory cells stores a stored data and receives a search data, including a first transistor and a second transistor. The first transistor has a first threshold voltage and receives a first gate bias. The second transistor is connected to the first transistor, and the second transistor has a second threshold voltage and receives a second gate bias. The stored data is encoded according to the first threshold voltage and the second threshold voltage, and the search data is encoded according to the first gate bias and the second gate bias. There is a mismatch distance between the stored data and the search data. An output current generated by each of the memory cells is related to the mismatch distance.

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Zhubei, Taiwan

Tian-Cih Bo