Macronix International Co., Ltd.

Other

Ti Wen Chen

Shuo-Nan Hung

Chun-Hsiung Hung

Chih-Chang Hsieh

Tsung Yi Chou

Shih-Lin Huang

Hang Ting Lue

Yi Te Shih

Yungchun Li

Pei Hsun Liao

Ho Hsuan Liu

A door lock has an inner door assembly, an indoor doorknob assembly, and an outdoor doorknob assembly. The inner door assembly has a locking assembly casing. The indoor doorknob assembly has a positioning resilient component located in the locking assembly casing and configured to switch the door lock between a locked state and an unlocked state. The door is provided with enhanced protection by enclosing the positioning resilient component in the locking assembly casing, so the safety is further improved.

Door lock

This disclosure provides a memory device. The memory device includes a plurality of memory cells and a control circuit coupled to the memory cells. The control circuit is configured to provide a first programming voltage to the memory cells; verify the memory cells against an interim level verify voltage to divide the memory cells into a first group of memory cells and a second group of memory cells according to whether the memory cells do not reach or do reach the interim level verify voltage, respectively; provide a second programming voltage to the first group of memory cells and inhibit the second group of memory cells from receiving the second programming voltage, the second programming voltage being greater than or equal to the first programming voltage; and verify the first group of memory cells and the second group of memory cells against a desired level voltage.

Electronic device, non-volatile memorty device, and programming method

Regardless of data values stored on data memory cells, all read operations on the data memory cells are disallowed. For example, current flow is disallowed through a string of the data memory cells and one or more select line memory cells. The particular select value stored in a first select line memory cell in the string, for example coupled to a ground select line or a string select line, determines whether the string is enabled or disabled.

Method and apparatus for indicating bad memory areas

A memory circuit includes word lines coupled to a memory array, including a first set of one or more word lines deselected in an erase operation, and a second set of one or more word lines selected in the erase operation. Control circuitry couples the first set of one or more word lines deselected in the erase operation to a reference voltage, responsive to receiving an erase command for the erase operation. Some examples further include a first transistor that switchably couples a word line to a global word line, and a second transistor that switchably couples the word line to a ground voltage. The control circuitry is coupled to the first transistor and the second transistor, wherein the control circuitry has a plurality of modes including at least an erase operation. In a first mode, the first transistor couples the word line to the global word line, and the second transistor decouples the word line from the ground voltage. In a second mode, the first transistor decouples the word line from the global word line, and the second transistor couples the word line to the ground voltage.

Word line driver circuit for selecting and deselecting word lines

A method of storing data in a multi-level charge-trapping memory array is described. An incidence-of-occurrence (i.e., frequency) analysis is performed on data to be programmed to identify data words combining a high programming voltage with a high frequency of occurrence. Those words are reassigned in order to reduce programming time.

Multi-level cell programming speed improvement through program level exchange

A memory device comprises a memory cell and a sense amplifier which has a sensing interval. An output circuit is coupled to the sense amplifier and responsive to a clock signal to accept the signal from the sense amplifier. A first source of timing signals generates a first timing signal in response to an enable signal which is asynchronous relative to the clock signal. A second source of timing signals generates a second timing signal based on the clock signal. A switch selects one of the first and second timing signals at the timing signals for use to define pre-charge and sensing intervals for the sense amplifier. The first source of timing signals is selected during an interval of time corresponding to a clock latency, so that the timing signals define a sensing interval where transitions in the clock signal are outside of the sensing interval.

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Tainan, Taiwan

Ti Wen Chen