Applied Materials, Inc.

Thuy Britcher

Juan Carlos Rocha-Alvarez

Ganesh Balasubramanian

Bok Hoen Kim

Hiroji Hanawa

Amit Kumar Bansal

Kwangduk Douglas Lee

Jay D Pinson, Ii

Martin Jay Seamons

Zheng John Ye

Sungwon Ha

Xinhai Han

Praket Prakash Jha

Tejas Ulavi

Zhijun Jiang

Masaki Ogata

Kaushik Comandoor Alayavalli

Ndanka O Mukuti

Allen Ko

A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Plasma processing using multiple radio frequency power feeds for improved uniformity

A substrate processing system includes a processing chamber that includes a substrate support positioned therein. The substrate processing system includes a valve system fluidly coupled to the processing chamber and configured to control flow of gas into the processing chamber. The valve system includes a primary flow line and a first gas source flow line fluidly coupled to the primary flow line through a first gas source valve. The valve system includes a second gas source flow line fluidly coupled to the primary flow line through a second gas source valve. The first gas source valve and the second gas source valve are positioned in series within the primary flow line.

Gas input system for a substrate processing chamber

A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.

Dual-channel showerhead for formation of film stacks

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San Jose, CA, United States of America

Thuy Britcher