S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Thuan Truong

Bruno Ghyselen

Walter Schwarzenbach

Thierry Barge

Jean-Marc Waechter

The invention relates to a method of splitting apart a substrate of two adjoining wafers defining between them a cleavage plane, by bringing each substrate into a substrate-receiving space; and clamping first and second jaw portions onto each substrate in such a manner as to hold each substrate and urge apart the two wafers of each substrate by co-operation between the shapes of housings in first and second portions of the two jaws, respectively. The invention also relates to a splitting method that includes bringing each substrate into a substrate-reception space; clamping together separator portions onto each substrate so as to split apart the two wafers of each substrate; and clamping the split-apart substrate wafers so as to hold the wafers together. An automated system for processing multiple substrates is also provided.

Apparatus and method for splitting substrates

The invention provides an apparatus for splitting a substrate apart, the substrate comprising two adjoining wafers defining between them a cleavage plane, the apparatus being characterized in that it comprises:

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Domène, France

Thuan Truong