Infineon Technologies Ag

Thorsten Arnold

Roman Baburske

Alexander Philippou

Hans-Juergen Thees

Alim Karmous

Ilaria Imperiale

A power semiconductor device includes an active region with power cells, each configured to conduct a load current portion between first and second load terminals. Each power cell includes: trenches and mesas laterally confined by the trenches and in a vertical direction adjoining a drift region. The mesas include an active mesa having a source region of a first conductivity type and a body region of a second conductivity type separating the source region from the drift region. Both the source and body region are electrically connected to the first load terminal. At least one trench adjacent to the active mesa is configured to induce a conductive channel in the active mesa. A punch through structure s electrically separated from the active mesa by at least one separation stack.

Power semiconductor device and method of producing a power semiconductor device

A power semiconductor device first trench structures extending from a first main surface into a semiconductor body up to a first depth. The first trench structures extend in parallel along a first lateral direction. Each first trench structure includes a first dielectric and a first electrode. The power semiconductor device further includes second trench structures extending from the first main surface into the semiconductor body up to a second depth that is smaller than the first depth. The second trench structures extend in parallel along a second lateral direction and intersect the first trenches at intersection positions. Each second trench structure includes a second dielectric and a second electrode. The second dielectric is arranged between the first electrode and the second electrode at the intersection positions.

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Jesenwang, Germany

Thorsten Arnold