Freiberger Compound Materials Gmbh

Freiberger Compund Materials Gmbh

Thomas Wunderer

Ferdinand Scholz

Stephan Schwaiger

Frank Habel

Peter Brückner

Frank Lipski

Ilona Argut

Rudolph Rosch

Barbara Neubert

Ilona Schwaiger

Rudolph Rösch

A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (AlO) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.

Semipolar semiconductor crystal and method for manufacturing the same

In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a surface is provided which comprises more than one facet. Mask material is selectively deposited only on one or multiple, but not on all facets. The deposition of mask material may be particularly carried out during epitaxial growth of a III-N layer under growth conditions, by which (i) growth of at least a further III-N layer selectively on a first type or a first group of facet(s) and (ii) a deposition of mask material selectively on a second type or a second group of facet(s) proceed simultaneously. By the process according to the invention, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.

Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby

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Waltenhofen, Germany

Thomas Wunderer