Lam Research Ag

Semsysco Gmbh

Semsyso Gmbh

Thomas Wirnsberger

Andreas Gleissner

Rainer Obweger

Franz Kumnig

Harald F Okorn-Schmidt

Ulrich Tschinderle

Oliver Knoll

Ivan L Berry, Iii

Herbert Ötzlinger

Rafal Ryszard Dylewicz

Christian Thomas Fischer

Franz Markut

Mu Hung Chou

Franz Kumning

Alessandro Baldaro

Nathan Lavdovsky

Michael Brugger

Philipp Engesser

Alexander Lippert

Frank Ludwig Holsteyns

Harald Okorn-schmidt

Georg Hofer

Raoul Schröder

Markus Gersdorff

The invention relates to a substrate holding and locking system for chemical and/or electrolytic surface treatment of a substrate in a process fluid and a corresponding method. The system comprises a first element, a second element, a reduced pressure holding unit and a magnetic locking unit. The first element and the second element are configured to hold the substrate between each other. The reduced pressure holding unit comprises a pump to reduce an interior pressure inside the substrate holding and locking system below atmospheric pressure. The magnetic locking unit is configured to lock the first element and the second element with each other. The magnetic locking unit comprises a magnet control and at least a magnet. The magnet is arranged at one of the first element and the second element. The magnet control is configured to control a magnetic force between the first element and the second element.

Substrate holding and locking system for chemical and/or electrolytic surface treatment

The invention relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate comprises the following steps:

Method and device for plating a recess in a substrate

Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element.

Substrate locking system, device and procedure for chemical and/or electrolytic surface treatment

A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.

Method and apparatus for processing wafer-shaped articles

A device for processing wafer-shaped articles comprises a closed process chamber. The closed process chamber comprises a housing providing a gas-tight enclosure, a rotary chuck located within the closed process chamber and adapted to hold a wafer shaped article thereon, and an interior cover disposed within said closed process chamber. The interior cover is movable between a first position in which the rotary chuck communicates with an outer wall of the closed process chamber, and a second position in which the interior cover seals against an inner surface of the closed process chamber adjacent the rotary chuck to define a gas-tight inner process chamber.

Apparatus for treating surfaces of wafer-shaped articles

A rotary chuck for processing wafer-shaped articles comprises a chuck body having a series of gripping pins that are movable by sliding horizontally and in unison relative to the chuck body from a first position in which the gripping pins are relatively more retracted into the chuck body to a second position in which the gripping pins are relatively more extended from the chuck body and in which the gripping pins are positioned so as to support a wafer-shaped article of a predetermined diameter.

An apparatus for treating a surface of an article includes a chamber for receiving an article to be treated. A dispenser dispenses a treatment liquid including inorganic acid onto the article. A tank stores the treatment liquid. An ozone generator communicates with a supply line entering or exiting the tank to mix ozone with the treatment liquid. A cooler cools the treatment liquid to a subambient temperature in a range of 3&#xb0; C. to less than 20&#xb0; C. A heater heats a surface of an article to be treated to a temperature at least 30&#xb0; C. greater than a temperature of the treatment liquid when applied to the article.

Method and apparatus for surface treatment using inorganic acid and ozone

A device for processing wafer-shaped articles comprises a rotary chuck having a series of pins adapted to hold a wafer shaped article on the rotary chuck. Each of the pins comprises a cylindrical body and a projecting gripping portion formed integrally therewith. The cylindrical body and gripping portion are made from a ceramic material. The gripping portion comprises cylindrical surfaces having a common generatrix with surfaces of the cylindrical body.

Device for treating surfaces of wafer-shaped articles and gripping pin for use in the device

A device for holding a wafer-shaped article comprises an annular chuck base body having a plurality of movable contact elements for securing a wafer-shaped article to the annular chuck base body, and a gear mechanism driving the contact elements in unison between a first position and a second position. The annular chuck base body comprises a housing formed from a material that is resistant to attack by strong inorganic acids. The annular chuck base body also comprises a reinforcing ring fitted within the housing and formed from a material whose coefficient of linear thermal expansion is substantially less than that of the housing material.

Device for holding wafer shaped articles

A cleaning fluid including dispersed gas avoids using ultrasonic energy to induce cavitation by subjecting a liquid containing dissolved gas to a pressure reduction in a bubble machine, to generate a gas/liquid dispersion. The cleaning fluid can be used to clean articles such as semiconductor wafers using a device that includes a holder and a vibrator for supplying ultrasonic or megasonic energy to the article.

Ultrasonic cleaning fluid, method and apparatus

A device for treating a disc-like article with a fluid, including elements for dispensing a fluid onto the article and a chuck for holding and rotating the article around an axis perpendicular thereto, the chuck including a base body, a drive ring, and gripping members for contacting the article at its edge. The gripping members are eccentrically movable with respect to the center of the article and driven by a drive ring rotatably mounted to the base body so that the drive ring is rotatable against the base body around the axis. The relative rotational movement of the drive ring against the base body is carried out by either holding the base body and rotating the drive ring or by holding the drive ring and rotating the base body, whereby the to-be-held-part (drive ring or base body) is held without touching the respective to-be-held-part by magnetic force.

Device for treating disc-like articles

Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by dissolving gaseous ozone into relatively cool inorganic acid, dispensing the acid ozone mixture onto a wafer, and rapidly heating the surface of the wafer to a temperature at least 30&#xb0; C. higher than the temperature of the acid ozone mixture.

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Seeboden, Austria

Thomas Wirnsberger