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Cs Halbleiter -und Solartechnologie Gmbh

Thomas Weber

Christoph Scholz

Walter Holzinger

Franz Koehl

A device and method for providing a supply of single sheets wherein each single sheet has a varying thickness. The present invention includes a stack of single sheets that are supported on a lifting platform. The lifting platform includes a compensation device for leveling the stack by compensating for the varying thickness of each single sheet.

Device and method for providing a supply of single sheets of different thickness

A method for cleaning waste gases containing ozone-depleting and/or climate-active halogenated compounds has a sorption device (S1,S2) having two chambers (1, 2) each containing a solid stationary sorbent (6, 7) for the ozone-depleting and/or climate-active halogenated compounds and communicate with each other via a heating device (4). The two chambers (1, 2) are alternatively connectable with the gas feeding means (8) for the waste gas to be cleaned for reversing the direction of flow of the waste gas to be cleaned.

Method for cleaning gases containing ozone-depleting and/or

The newspaper carrying pouch is provided with attachment means (4, 5) for securing on a carrying strap, newspaper wagon (12) or the like. For filling up of the newspaper carrying pouch (1) an opening (6) is provided. The newspaper carrying pouch (1) is constructed as a tubular shaped container for insertion of a roll pack (7), whereby the container is closed off on its first end with a first lid part (2) and on its other end, through which the roll pack (7) is introduced into the newspaper carrying pouch (1), with at least a partially closeable second lid part (3).

Newspaper pouch

To produce a large-surface wafer, a monocrystalline SiC layer (4) is grown epitaxially on a monocrystalline Si layer (1) provided with a nucleation layer (3) by carbonization. On the monocrystalline SiC layer (4), a polycrystalline SiC layer (5) is deposited. The Si layer is then etched away, resulting in a wafer consisting of a compound of monocrystalline and polycrystalline SiC layers (4, 5) and meeting the highest demands of semiconductor technology.

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Munich, Germany

Thomas Weber