Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Technische Universitaet Chemnitz

Infineon Technologies Ag

Thomas Waechtler

Thomas Gessner

Heinrich Lang

Stefan Schulz

Hans-Joachim Schulze

Moriz Jelinek

Daniel Schloegl

Christian Krueger

Benedikt Stoib

Oana Julia Spulber

Steve Mueller

André Tuchscherer

Alexander Jakob

Bernd Bitnar

A semiconductor device includes: an n-doped drift region between first and second surfaces of a semiconductor body; a p-doped first region at the second surface; and an n-doped field stop region between the drift and first region. The field stop region includes first and second sub-regions with hydrogen related donors. A p-n junction separates the first region and first sub-region. A concentration of the hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value, and steadily decreases from the maximum value to a reference value at a first transition between the sub-regions. A second vertical extent of the second sub-region ends at a second transition to the drift region where the concentration of hydrogen related donors equals 10% of the reference value. A maximum concentration value in the second sub-region is at most 20% larger than the reference value.

Semiconductor device including a field stop region

A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected from a ruthenium complex, a nickel complex, a palladium complex or mixtures thereof. In the second step, a layer is deposited at least on partial regions of a surface of the substrate by using the first precursor and the second precursor by means of atomic layer deposition (ALD). The molar ratio of the first precursor:second precursor used for the ALD extends from 90:10 to 99.99:0.01. The obtained layer contains copper and at least one of ruthenium, nickel and palladium. Finally, a reduction is performed step in which a reducing agent acts on the substrate obtained after depositing the copper-containing layer.

Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method

A method can be used for the production of a coated substrate. The coating contains copper. A copper precursor and a substrate are provided. The copper precursor is a copper(I) complex which contains no fluorine. A copper-containing layer is deposited by means of atomic layer deposition (ALD) at least on partial regions of the substrate surface by using the precursor. Optionally, a reduction step is performed in which a reducing agent acts on the substrate obtained in the layer deposition step. In various embodiments, the precursor is a complex of the formula LCu(X&#x2229;X) in which L are identical or different &#x3c3;-donor-&#x3c0; acceptor ligands and/or identical or different &#x3c3;,&#x3c0;-donor-&#x3c0; acceptor ligands and X&#x2229;X is a bidentate ligand which is selected from the group consisting of &#x3b2;-diketonates, &#x3b2;-ketoiminates, &#x3b2;-diiminates, amidinates, carboxylates and thiocarboxylates.

Substrate having a coating comprising copper and method for the production thereof by means of atomic layer deposition

Growing community of inventors

Chemnitz, Germany

Thomas Waechtler