Osram Opto Semiconductors Gmbh

Thomas Veit

Korbinian Perzlmaier

Heribert Zull

Jens Dennemarck

Mathias Kämpf

Franz Eberhard

Andreas Plöβl

Bernd Böhm

Ewald Karl Michael Günther

Alfred Lell

Christoph Eichler

Sven Gerhard

Andreas Ploessl

Roland Enzmann

Jens Mueller

Markus Horn

Bernd Boehm

Mathias Kaempf

Markus Arzberger

Juergen Dachs

Thomas Adlhoch

Markus Graul

Stefan Listl

Joachim Pfeiffer

A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

Method of producing semiconductor chips that efficiently dissipate heat

A method of producing a laser chip includes providing a semiconductor wafer; creating a plurality of depressions arranged one behind another along a breaking direction on a top side of the semiconductor wafer, wherein 1) each depression includes a front boundary face and a rear boundary face successively in the breaking direction, 2) in at least one depression, the rear boundary face is inclined by an angle of 95&#xb0; to 170&#xb0; relative to the top side of the semiconductor wafer, 3) at least one depression includes a shoulder adjacent to the rear boundary face, and 4) the shoulder includes a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; and breaking the semiconductor wafer in the breaking direction at a breaking plane oriented perpendicularly to the top side of the semiconductor wafer and which runs through the depressions.

Method of producing a laser chip

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Method of producing a semiconductor body

A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.

Carrier substrate and method for producing semiconductor chips

Method for producing semiconductor laser elements () comprises A) providing a carrier composite () having a plurality of carriers () for the semiconductor laser elements (), B) providing a laser bar () having a plurality of semiconductor laser diodes () which comprise a common growth substrate () and a semiconductor layer sequence () grown thereon, C) generating predetermined breaking points () on a substrate underside () of the growth substrate (), said substrate underside facing away from the semiconductor layer sequence (), D) attaching the laser bar () to a carrier upper side () of the carrier composite (), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (), wherein steps B) to E) are performed in the indicated sequence.

Method for producing semiconductor laser elements and semi-conductor laser element

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.

Method for producing a semiconductor body

A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.

Method for singulating a component composite assembly

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Mintraching, Germany

Thomas Veit