Ams International Ag

Ams Ag

Thomas Troxler

Jens Hofrichter

Josef Pertl

Guy Meynants

Andreas Fitzi

Richard Forsyth

Thomas Stockmeier

Franz Schrank

Jochen Kraft

Thomas Froehlich

Georg Parteder

Michael Leitner

Dominik Hollinger

Thomas Mueller

The package comprises a carrier, an electronic device arranged on the carrier, a shield arranged on the electronic device on a side facing away from the carrier, and an absorber film comprising nanomaterial applied on or above the shield.

Radiation-hardened package for an electronic device

The semiconductor device comprises a substrate of semiconductor material having a main surface, an integrated circuit in the substrate, a photodetector element or array of photodetector elements arranged at or above the main surface, and at least one nanomaterial film arranged above the main surface. At least part of the nanomaterial film has a scintillating property. The method of production includes the use of a solvent to apply the nanomaterial film, in particular by inject printing, by silk-screen printing, by spin coating or by spray coating.

Semiconductor device for indirect detection of electromagnetic radiation and method of production

The assembly comprises a semiconductor device with an active-pixel array, a readout circuit chip or plurality of readout circuit chips mounted outside the active-pixel array, the readout circuit chip or plurality of readout circuit chips being configured to read out voltages or currents provided by the active-pixel array, and electric connections between the active-pixel array and the readout circuit chip or plurality of readout circuit chips.

Assembly for detecting electromagnetic radiation and method of producing an assembly for detecting electromagnetic radiation

At least one of the pixels of the image sensor is heated using at least one heater, and the temperature of this pixel is thus increased by a larger degree than the temperature of at least a further one of the pixels.

Method of operating a semiconductor image sensor with integrated pixel heating

The sensor chip stack comprises a sensor substrate of a semiconductor material including a sensor, a chip fastened to the sensor substrate, the chip including an integrated circuit, electric interconnections between the sensor substrate and the chip, electric terminals of the chip, the chip being arranged between the electric terminals and the sensor substrate, and a molding material arranged adjacent to the chip, the electric terminals of the chip being free from the molding material.

Sensor chip stack and method of producing a sensor chip stack

The semiconductor image sensor comprises a plurality of pixels () with photo sensors (). At least one heater () is integrated with the photo sensors and is arranged in at least one of the pixels or in the vicinity of at least one of the pixels. An appropriate operation of the heater will increase the temperature of the relevant pixel. Thus it is possible to achieve a local compensation of a temperature difference that may be due to the operation of an integrated readout circuit () or any other integrated component generating heat.

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Erlenbach, Switzerland

Thomas Troxler