Carl Zeiss Smt Gmbh

Carl Zeiss Sms Ltd.

Thomas Thaler

Ute Buttgereit

Holger Seitz

Ulrich Matejka

Thomas Trautzsch

Markus Deguenther

Heiko Feldmann

Johannes Ruoff

Vladimir Dmitriev

Christoph Husemann

Thomas Scheruebl

Dirk Beyer

Thomas Frank

Joachim Welte

Sascha Perlitz

Yuval Perets

Joerg Frederik Blumrich

Kujan Gorhad

Steffen Steinert

Shao-Chi Wei

Dmitry Simakov

Thomas Rademacher

Mame Kouna Top-Diallo

Robert Birkner

Dominik Grau

The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.

Apparatus and method for characterizing a microlithographic mask

The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps:

Method for measuring photomasks

The invention relates to a method and an appliance for predicting the imaging result obtained with a mask when a lithography process is carried out, wherein the mask comprises mask structures to be imaged and the mask is destined to be illuminated in a lithography process in a projection exposure apparatus with a predetermined illumination setting for exposing a wafer comprising a photoresist. In accordance with one aspect of the invention, a method according to the invention comprises the following steps: measuring at least one intensity distribution obtained for the mask in the case of an illumination with illumination light in accordance with the illumination setting in a mask inspection apparatus using a sensor arrangement, ascertaining an electric field resulting from the interaction of the illumination light with the mask structures, both in respect of amplitude and in respect of phase, by way of this intensity measurement, and estimating an intensity distribution obtained in the photoresist when the lithography process is carried out on the basis of a mathematical simulation (forward calculation), in which the electric field ascertained is propagated in a layer system comprising at least the photoresist.

Method and appliance for predicting the imaging result obtained with a mask when a lithography process is carried out

The invention relates to a method and a device for characterizing a mask for microlithography. In a method according to the invention, structures of a mask intended for use in a lithography process in a microlithographic projection exposure apparatus are illuminated by an illumination optical unit, wherein the mask is imaged onto a detector unit by an imaging optical unit, wherein image data recorded by the detector unit are evaluated in an evaluation unit. In this case, for emulating an illumination setting predefined for the lithography process in the microlithographic projection exposure apparatus, the imaging of the mask onto the detector unit is carried out in a plurality of individual imagings which differ from one another with regard to the illumination setting set in the illumination optical unit or the polarization-influencing effect set in the imaging optical unit.

Method and device for characterizing a mask for microlithography

The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps:

Method for correcting the critical dimension uniformity of a photomask for semiconductor lithography

A method is provided for determining an OPC model comprising: recording an aerial image by use of a mask inspection microscope, wherein the aerial image comprises at least one segment of a mask; simulating a plurality of aerial images which comprise at least the segment, proceeding from a mask design and from predefined parameters of an optical model which is part of the OPC model, wherein the parameters differ for each of the simulated aerial images of the plurality of aerial images; determining differences between the measured aerial image and the simulated aerial images; determining those parameters for which the differences between simulated aerial image and measured aerial image are the least. In addition, a mask inspection microscope for carrying out the method is provided.

Method and device for determining an OPC model

A method for examining a mask includes providing a position data set having error positions of the mask to be examined, providing a structure data set having the structure of the mask, and specifying structural features of the mask, the values of which are to be determined. At each error position, determining the values of the specified structural features of the structure by using a computing unit, determining a measuring task from specified decision criteria and from the determined values of the structural features of the structure by using the computing unit, and carrying out the determined measuring task in a manner controlled by the computing unit. In addition, a device, in particular a microscope, for carrying out the method is provided.

Method and device for examining a mask

A method is provided for emulating the imaging of a scanner mask pattern to expose wafers via a mask inspection microscope, in which the mask was corrected by introducing scattering centers. The method includes determining a correlation between the first values of at least one characteristic of aerial images of the mask pattern as produced by a mask inspection microscope and the second values of the at least one characteristic of aerial images of the mask pattern as produced by a scanner, recording a first aerial image of the mask pattern with the mask inspection microscope, determining the first values of the at least one characteristic from the first aerial image, and determining the second values of the at least one characteristic of the first aerial image, using the correlation. A mask inspection microscope is also provided for emulating the imaging of a mask pattern of a scanner to expose wafers, in which the mask was corrected by introducing scattering centers.

Emulation of reproduction of masks corrected by local density variations

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Jena, Germany

Thomas Thaler