Siemens Aktiengesellschaft

Thomas Suefke

Oskar Nuyken

Ferdinand Quella

Klaus Budde

A cover layer for micro-electronic components and VLSI circuits is provided for protecting the components and circuits against alpha radiation. The cover layer is produced by ultraviolet cross linking of a negative resist, wherein, as a constituent for absorbing the alpha rays, the negative resist contains a substituted triphosphazene of the formula (I) whose organic radicals are bonded to phosphorus via oxygen and wherein, on a statistical average, 1 through 3 radicals have cross-linkable, light-sensitive groups. The cover layer provided good protection from alpha rays, has low shrinkage during curing and, given high thermal resistance, can be combined when mixing with other negative resists. ##STR1##

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Munich, Germany

Thomas Suefke