Hitachi Energy Ltd

Abb Schweiz Ag

Abb Technology Ag

Thomas Stiasny

Florin Udrea

Munaf Rahimo

Martin Arnold

Chiara Corvasce

Tobias Wikstroem

Umamaheswara Vemulapati

Paul Commin

Marina Antoniou

Neophytos Lophitis

A turn-off power semiconductor device includes first and second thyristor cells, a common gate contact and a plurality of stripe-shaped electrically conductive first gate runners. Each first gate runner has a first end portion, a second end portion opposite to the first end portion and a first connecting portion connecting the first end portion and the second end portion. The first end portion is directly connected to the common gate contact. The first gate electrode layer portions of all first thyristor cells are implemented as a first gate electrode layer. The second gate electrode layer portions of all second thyristor cells are implemented as a second gate electrode layer. The first gate electrode layer is directly connected to the common gate contact. At least the first connecting portion of each first gate runner is separated from the first gate electrode layer.

Turn-off power semiconductor device with gate runners

A power diode comprises a plurality of diode cells (). Each diode cell () comprises a first conductivity type first anode layer (), a first conductivity type second anode layer () having a lower doping concentration than the first anode layer () and being separated from an anode electrode layer () by the first anode layer (), a second conductivity type drift layer () forming a pn-junction with the second anode layer (), a second conductivity type cathode layer () being in direct contact with the cathode electrode layer (), and a cathode-side segmentation layer () being in direct contact with the cathode electrode layer (). A material of the cathode-side segmentation layer () is a first conductivity type semiconductor, wherein an integrated doping content of the cathode-side, which is integrated along a direction perpendicular to the second main side (), is below 2·10cm, or a material of the cathode-side segmentation layer () is an insulating material. A horizontal cross-section through each diode cell () along a horizontal plane (K) comprises a first area where the horizontal plane (K) intersects the second anode layer () and a second area where the plane (K) intersects the drift layer ().

Segmented power diode structure with improved reverse recovery

A spacer system for a semiconductor switching device which is formed as a spacer ring and a plurality of insulating elements and supporting elements are arranged in an alternating manner around a circumference of the spacer ring. The insulating element includes a recess receiving a cathode gate connector element. The supporting element includes a projection receiving a spring system for clamping while assembling the switching device. The switching device includes a substrate, a cathode pole piece, an anode pole piece, strain buffer plates and a gate ring. Further connector elements, are electrically connecting the cathode pole piece and the gate ring of the semiconductor switching device to an external circuit unit. The space between the connector elements is minimized in order to reduce the gate circuit impedance, thus enabling an increased maximum turn-off current and further allowing for the use of larger semiconductor switching devices for high power applications.

Spacer system for a semiconductor switching device

An exemplary reverse-conducting power semiconductor device with a wafer having a first main side and a second main side parallel to the first main side. The device includes a plurality of diode cells and a plurality of IGCT cells, each IGCT cell including between the first and second main side: a first anode electrode, a first anode layer of a first conductivity type on the first anode electrode, a buffer layer of a second conductivity type on the first anode layer, a drift layer of the second conductivity type on the buffer layer, a base layer of the first conductivity type on the drift layer, a first cathode layer of a second conductivity type on the base layer, and a cathode electrode on the first cathode layer. A mixed part includes the second anode layers of the diode cells alternating with the first cathode layers of the IGCT cells.

Reverse-conducting power semiconductor device

Growing community of inventors

Wädenswil, Switzerland

Thomas Stiasny