Asml Netherlands B.v.

Carl Zeiss Smt Gmbh

Carl-zeiss-smt Ag

Thomas Stein

Johannes Hubertus Josephina Moors

Bastiaan Theodoor Wolschrijn

Dirk Heinrich Ehm

Dieter Kraus

Marcus Gerhardus Hendrikus Meijerink

Vadim Yevgenyevich Banine

Maarten Marinus Johannes Wilhelmus Van Herpen

Wouter Anthon Soer

Lucas Henricus Johannes Stevens

Stephan Muellender

Edwin Te Sligte

Yurii Victorovitch Sidelnikov

Kurt Gielissen

Richard Versluis

Johannes Peterus Henricus De Kuster

Marc Hubertus Lorenz Van Der Velden

Arnold Storm

Michel Riepen

Norbertus Benedictus Koster

Stefan-Wolfgang Schmidt

Harald Woelfle

Michiel Nienoord

Arnoldus Jan Storm

Annemieke Van De Runstraat

Marco G H Meijerink

A G Ton M Bastein

Esther L J Van Soest-Vercammen

Frits G H M Gubbels

Peter J Oprel

The invention is directed to a method for at least partially removing a contamination layer () from an optical surface () of an EUV-reflective optical element () by bringing a cleaning gas into contact with the contamination layer. In the method, a jet () of cleaning gas is directed to the contamination layer () for removing material from the contamination layer (). The contamination layer () is monitored for generating a signal indicative of the thickness of the contamination layer () and the jet () of cleaning gas is controlled by moving the jet () of cleaning gas relative to the optical surface () using this signal as a feedback signal. A cleaning arrangement (to) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet () of cleaning gas and to a corresponding cleaning gas generation arrangement.

Method for removing a contamination layer from an optical surface and arrangement therefor

An optical arrangement, e.g. a projection exposure apparatus () for EUV lithography, includes: a housing () enclosing an interior space (); at least one, preferably reflective optical element (--) arranged in the housing (); at least one vacuum generating unit () for the interior space () of the housing (); and at least one vacuum housing (-) arranged in the interior space () and enclosing at least the optical surface () of the optical element (--). A contamination reduction unit is associated with the vacuum housing (-) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface () in relation to the partial pressure of the contaminating substances in the interior space ().

Optical arrangement, in particular projection exposure apparatus for EUV lithography, as well as reflective optical element with reduced contamination

Method for removing a contamination layer from an optical surface and arrangement therefor as well as a method for generating a cleaning gas and arrangement therefor

An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30&#xb0; C. or more, preferably of approximately 100&#xb0; C. or more, particularly preferably of approximately 150&#xb0; C. or more, and even more preferably of approximately 250&#xb0; C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element

A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

Components () in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component () to be cleaned, using electrodes (), wherein the electrodes () are adapted to the form of the component () to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable () with a coupling-in optical unit () is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.

Method for cleaning an EUV lithography device, method for measuring the residual gas atmosphere and the contamination and EUV lithography device

A method to clean optical elements of an apparatus, the apparatus being configured to project a beam of radiation onto a target portion of a substrate, the apparatus comprising a plurality of optical elements arranged in sequence in the path of the radiation beam, wherein the cleaning method comprises: cleaning one or more second optical elements of the sequence, which receive one or more relatively low second radiation doses during operation of the apparatus, utilizing cumulatively shorter cleaning periods than one or more first optical elements of the sequence that receive one or more first radiation doses during operation of the apparatus, a second radiation dose being lower than each relatively high first radiation dose.

Cleaning method, apparatus and cleaning system

Growing community of inventors

Oberkochen, Germany

Thomas Stein