Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Soitec

S.o.i.tec Silicon on Insulator Technologies

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Commissariat À L'energie Atomique (Cea)

Thomas Signamarcheix

Chrystel Deguet

Franck Fournel

Laurent Clavelier

Hubert Moriceau

Emmanuel Augendre

Lamine Benaissa

Takeshi Akatsu

Aurélie Tauzin

Frederic Mazen

Eric Guiot

Loic Sanchez

Emmanuelle Lagoutte

Mathieu Baudrit

An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm&#xb7;cm, preferably less than 5 mOhm&#xb7;cm.

Engineered substrate with embedded mirror

A method of transferring a thin layer from a first substrate to a second substrate with different coefficients of thermal expansion, including: providing at least one intermediate layer which temperature is increased by induction when an electromagnetic field is applied to it, more than a temperature increase in the first and second substrates; making contact between the first substrate and the second substrate, with the at least one intermediate layer interposed between them; fracturing the first substrate at a weakened zone making use of supply of thermal energy at the weakened zone made by applying an electromagnetic field to a heterostructure formed by making contact between the first substrate and the second substrate, the application generating local induction heating in the intermediate layer that induces a temperature gradient with a local value at the weakened zone activating the fracture mechanism.

Method for transferring a thin layer with supply of heat energy to a fragile zone via an inductive layer

The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localized positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.

Locally passivated germanium-on-insulator substrate

A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.

Method for producing hybrid components

A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.

Method of producing a hybrid substrate by partial recrystallization of a mixed layer

A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.

Method in the microelectronics fields of forming a monocrystalline layer

The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localised positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.

Method for fabricating a locally passivated germanium-on-insulator substrate

A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallization of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.

Method of producing a hybrid substrate having a continuous buried electrically insulating layer

A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.

Method of making multiple implantations in a substrate

A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.

Growing community of inventors

La Terrasse, France

Thomas Signamarcheix