Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Oledgmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Osram Otpo Semiconductors Gmbh

Thomas Schwarz

Frank Singer

Stefan Illek

Jürgen Moosburger

Peter Brick

Matthias Sabathil

Hubert Halbritter

Ulrich Steegmüller

Laura Kreiner

Jean-Jacques Drolet

Stefan Groetsch

Sebastian Wittmann

Michael Kühnelt

Andreas Dobner

Lutz Höppel

Markus Pindl

Alexander Linkov

Roland Schulz

Michael Brandl

Andreas Plößl

Sandra Sobczyk

Siegfried Herrmann

Tobias Gebuhr

Michael Wittmann

Uli Hiller

Alexander Martin

Matthias Goldbach

Jens Richter

Thorsten Frank Baumheinrich

Ludwig Hofbauer

Andreas Waldschik

Matthias Bruckschloegl

Alexander F Pfeuffer

Markus Heinrich Klein

Karl Engl

Christian Leirer

Tansen Varghese

Hans-Jürgen Lugauer

Kilian Regau

Rainer Huber

Hoa Vu

Paul Ta

Tilman Ruegheimer

Patrick Hoerner

Christopher Soell

Ralph Wirth

Georg Bogner

Korbinian Perzlmaier

Michael Zitzlsperger

Jörg Erich Sorg

Martin Rudolf Behringer

Walter Wegleiter

Johannes Baur

Andreas Biebersdorf

Markus Maute

Andreas Plössl

Simon Schwalenberg

Wolfgang Reill

Christopher Wiesmann

Julia Stolz

Wolfgang Moench

Björn Hoxhold

Juergen Dachs

Berthold Hahn

Norwin Von Malm

Herbert Brunner

Stefan Grötsch

Erwin Lang

Stephan Lutgen

Tony Albrecht

Andreas Ploessl

Karsten Diekmann

Marc Philippens

Lutz Hoeppel

Bernhard Stojetz

Petrus Sundgren

Bernd Barchmann

Christoph Klemp

Martin Brandl

Joerg Sorg

Ines Pietzonka

Thomas Dobbertin

Martin Haushalter

Andreas Wojcik

Anna Kasprzak-Zablocka

Juergen Moosburger

Karsten Auen

Dirk Becker

Markus Horn

Christine Rafael

Wolfgang Mönch

Andreas Leber

Felix Feix

Christian Berger

Andreas Breidenassel

Ana Kanevce

Sebastian Stigler

Xue Wang

Nicole Heitzer

Philipp Schlosser

In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.

Method for producing radiation-emitting semiconductor chips, radiation-emitting semiconductor chip and radiation-emitting component

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.

Optoelectronic device

An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular μLEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

Window or surface of a vehicle comprising at least one optoelectronic component

A component comprising a structural element, a leadframe and a shaped body, in which component the structural element and the leadframe are enclosed at least in regions by the shaped body in lateral directions and the leadframe does not project beyond side faces of the shaped body. The leadframe has at least one first subregion and at least one second subregion which is laterally spaced apart from the first subregion, wherein the structural element is electrically conductively connected to the second subregion by a planar contact structure. Furthermore, the structural element is arranged, in plan view, on the first subregion and projects laterally beyond the first subregion at least in regions, so that the structural element and the first subregion form an anchoring structure at which the structural element and the first subregion are anchored to the shaped body. Further specified is a method for producing such a component.

Component and method for producing a component

The invention relates to a component with a support and a plurality of semiconductor chips, in which the support has a single-ply, electrically conducting support layer, wherein the support layer is structured and has a plurality of sublayers. The support layer has a mounting surface, on which the semiconductor chips are arranged, wherein the semiconductor chips are mechanically supported by the support layer and electrically conductively connected to the sublayers. The support has a common electrode for semiconductor chips of a group of a plurality of semiconductor chips, wherein the common electrode is formed by one of the sublayers or by a plurality of electrically connected sublayers of the support layer. The invention further relates to a method for producing a component of this kind.

Component for a display, and method for producing a component

A display device with a connection carrier and a plurality of pixels, which are drivable via row lines and column lines, is specified. The row lines and the column lines are arranged on the connection carrier. At least one row line is interrupted at an imaginary crossing point with a column line on the connection carrier. A bridging component is arranged on the connection carrier, which bridges the row line at the imaginary crossing point in an electrically conductive manner.

Display device and display unit

In an embodiment an arrangement includes a plurality of optoelectronic semiconductor components arranged in a common plane, wherein each semiconductor component is laterally delimited by side faces, and wherein each semiconductor component includes a semiconductor body having an active region configured to emit electromagnetic radiation, a radiation outlet side configured to couple out the electromagnetic radiation, a rear face opposite to the radiation outlet side, and a contact structure arranged on the rear face, an output element, an electrically insulating insulation layer and an electrical connection structure, wherein the insulation layer is arranged between side faces of adjacent semiconductor components, wherein the output element is arranged at the radiation outlet sides of the semiconductor components, wherein the electrical connection structure is electrically conductively connected with the contact structure, and wherein the connection structure includes an adhesive layer, a growth layer and a connection layer.

Arrangement having semiconductor components that emit electromagnetic radiation and production method therefor

Disclosed are various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

An optoelectronic light emitting device includes a pixel with a transparent or translucent carrier substrate, on which a semiconductor light emitting arrangement with at least one micro LED is arranged. The micro LED extends over a partial area of the pixel. The main radiation direction of the semiconductor light emitting arrangement is directed onto a backscattering surface element arranged behind the transparent carrier substrate in viewing direction. The semiconductor light emitting arrangement includes a beam shaping element.

Optoelectronic light emitting device and manufacturing method

In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.

Method for producing semiconductor lasers and semiconductor lasers

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Wuppertal, Germany

Thomas Schwarz