Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Osram Oledgmbh

Thomas Schlereth

Michael Bestele

Ivar Tangring

Christian Gaertner

Tony Albrecht

Albert Schneider

Stephan Kaiser

Markus Hofmann

Hans-Christoph Gallmeier

Markus Kirsch

Herbert Brunner

Wolfgang Schmid

Karlheinz Arndt

Tobias Gebuhr

Ion Stoll

Alexander Linkov

Franz Eberhard

Ales Markytan

Roland Schulz

Christian Gärtner

Peter Holzer

Hagen Luckner

Stefan Handl

Elena Rachkova

A method for producing a plurality of radiation emitting semiconductor devices and a radiation emitting semiconductor device are disclosed. In an embodiment a method include providing an auxiliary carrier, applying a plurality of radiation-emitting semiconductor chips to the auxiliary carrier with front sides so that rear sides of the semiconductor chips are freely accessible, wherein each rear side of the respective semiconductor chip has at least one electrical contact, applying spacers to the auxiliary carrier so that the spacers directly adjoin side surfaces of the semiconductor chips and applying a casting compound between the semiconductor chips by a screen printing process such that a semiconductor chip assembly is formed, wherein a screen for the screen printing process has a plurality of cover elements, and wherein each cover element covers at least one electrical contact.

Method for producing a plurality of radiation-emitting semiconductor devices with a screen for a screen printing process

A method for producing a plurality of radiation-emitting semiconductor components and a radiation-emitting semiconductor component are disclosed. In an embodiment a method includes providing an auxiliary carrier, applying a first structured wavelength converting layer to the auxiliary carrier comprising a plurality of structural elements, filling regions between the structural elements with a first reflective casting compound and applying a radiation-emitting semiconductor chip with its front side to one structural element of the first structured wavelength converting layer in each case.

Method for producing a multiplicity of radiation-emitting semiconductor components, and radiation-emitting semiconductor component

An electronic component includes a first contact point for n-side contacting, a second contact point for p-side contacting, and a protective diode, which is connected antiparallel to the first contact point and to the second contact point. The protective diode includes a first diode structure which is p-conductive and a second diode structure which is n-conductive. The first diode structure is formed as a layer which overlaps in places with the first contact point in a first overlap region. The second diode structure is formed as a layer which overlaps in places with the second contact point in a second overlap region. The first diode structure and the second diode structure overlap each other in a third overlap region.

Electronic component including protective diode for electrostatic discharge protection

A filament includes a plurality of strings including radiation-emitting semiconductor chips electrically connected in series; and a plurality of contact structures to contact the strings, wherein the contact structures electrically connect to semiconductor chips at ends of the strings such that the strings are electrically drivable via the contact structures, and the filament is configured such that the strings are electrically drivable at least separately from one another via the contact structures.

Filament and lighting device

A filament includes a radiation-transmissive substrate, a plurality of LEDs, and a converter layer, wherein the substrate has an upper side and a lower side facing away from the upper side, the LEDs being arranged on the upper side of the substrate, the converter layer covers the LEDs, the upper side and the lower side of the substrate, and the converter layer has a first sublayer on the upper side and a second sublayer on the lower side, the converter layer is configured to obtain an improved radiation profile of the filament, along a lateral direction, the converter layer has a continuously varying vertical layer thickness, the lateral direction is a lateral longitudinal direction parallel to a main extension surface of the substrate, and the substrate has a length expanding along the lateral longitudinal direction that is greater than a width of the substrate along a lateral transverse direction.

Filament, method of producing a filament and a light source including a filament

A filament includes a multiplicity of light-emitting semiconductor chips, wherein the semiconductor chips are arranged on a carrier, the semiconductor chips being electrically contacted, a scattering structure is configured to scatter light of the light-emitting semiconductor chips, the scattering structure is formed by structuring a surface, a converter covers the light-emitting semiconductor chips, and the structuring of the surface is formed on a surface of the converter.

Filament with light-emitting semiconductor chips, lighting means and method of producing a filament

A filament includes a radiation-transmissive substrate, a plurality of light emitting diodes and a converter layer, wherein the substrate has an upper side and a lower side facing away from the upper side, and the LEDs are arranged on the upper side of the substrate, the converter layer covers the LEDs, the upper side and the lower side of the substrate, and the converter layer has a first sublayer on the upper side and a second sublayer on the lower side, and the converter layer is configured to obtain an improved radiation profile of the filament such that the converter layer has a varying vertical layer thickness along a lateral direction, and/or the first sublayer and the second sublayer differ from one another in their geometry and/or material composition.

The invention relates to a method for producing a plurality of optoelectronic components, comprising the following steps: &#x2014;providing an auxiliary support wafer () having contact structures (), wherein the auxiliary support wafer comprises glass, sapphire, or a semiconductor material, &#x2014;applying a plurality of radiation-emitting semiconductor bodies () to the contact structures (), &#x2014;encapsulating an least the contact structures () with a potting mass (), and &#x2014;removing the auxiliary support wafer (). The invention further relates to an optoelectronic component.

Method for producing a plurality of optoelectronic components and optoelectronic component

In one embodiment, the method is configured for producing optoelectronic semiconductor components () and includes the steps of:

Method for producing optoelectronic semiconductor components, leadframe assembly and optoelectronic semiconductor component

A ring light module having a plurality of optoelectronic semiconductor components for producing electromagnetic radiation, a reflector of the ring light module comprising a reflective surface, and a support. The semiconductor components are mounted on the support. In a plan view of a main radiation side of the ring light module, the reflector comprises at most two planes of symmetry. The reflector tapers in the direction towards the main radiation side. At least some of the main emission directions of adjacent optoelectronic semiconductor components are oriented differently from each other, and the main emission directions point towards the reflective surface.

Ring light module

In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Optoelectronic semiconductor component, conversion-medium lamina and method for producing a conversion-medium lamina

An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.

Optoelectronic semiconductor device with protective and reflective sheaths

A semiconductor chip () is provided which comprises:

Monolithic semiconductor chip array

An optoelectronic semiconductor chip () is specified, comprising a semiconductor layer sequence () having at least two active regions () arranged one above another, wherein the active regions () each have a first semiconductor region () of a first conduction type, a second semiconductor region () of a second conduction type and a radiation-emitting active layer () arranged between the first semiconductor region () and the second semiconductor region (). The optoelectronic semiconductor chip () comprises a mirror layer (), which is arranged at a side of the semiconductor layer sequence () facing away from a radiation exit surface (), and at least two electrical contacts () which are arranged at a side of the mirror layer () facing away from the radiation exit surface (). Furthermore, a light source () comprising the optoelectronic semiconductor chip () is specified.

Optoelectronic semiconductor chip, and light source comprising the optoelectronic semiconductor chip

An integrated tapered diode laser arrangement comprises an injector region () and a region () which is optically coupled to the injector region and expands in a cross section. At least one of said regions () has a quantum well structure with a plurality of semiconductor materials, wherein the semiconductor materials are intermixed at least in one region (). The intermixed region () has a larger electrical band gap than a non-intermixed region.

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Wuppertal, Germany

Thomas Schlereth