Carl Zeiss Sms Ltd.

Carl Zeiss Smt Gmbh

Carl Zeiss Jena Gmbh

Nuflare Technology, Inc.

Carl Zeiss Microelectric Systems Gmbh

Carl Zeiss Microelectronic Systems Gmbh

Thomas Scheruebl

Wolfgang Harnisch

Norbert Rosenkranz

Ulrich Matejka

Joern Greif-Wuestenbecker

Norbert Czarnetzki

Toralf Gruner

Karl-Heinz Schuster

Heiko Feldmann

Michael Totzeck

Hans-Juergen Dobschal

Christoph Husemann

Dirk Beyer

Ulrich Stroessner

Rigo Richter

Lars Stoppe

Vladimir Dmitriev

Dirk Seidel

Michael Arnz

Oliver Kienzle

Shusuke Yoshitake

Holger Seitz

Alexander Freytag

Markus Koch

Carsten Schmidt

Joachim Welte

Thomas Thaler

Ute Buttgereit

Manfred Matthae

Axel Zibold

Robert Brunner

Yuval Perets

Manabu Isobe

Anthony Garetto

Beat Marco Mout

Gilles Tabbone

Kujan Gorhad

Yuji Kobiyama

Nobert Rosenkranz

Ralph Semmler

Eckard Hagemann

Sven Heisig

Toshiro Kurosawa

Stefan Mack

Vahagn Sargsyan

Doug Uzzel

Jon Morgan

An apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.

Apparatus and method for analyzing an element of a photolithography process with the aid of a transformation model

In detecting the structure of a lithography mask, a portion of the lithography mask is firstly illuminated with illumination light of an at least partially coherent light source in the at least one preferred illumination direction. A diffraction image of the illuminated portion is then recorded by spatially resolved detection of a diffraction intensity of the illumination light diffracted from the illuminated portion in a detection plane. The steps of 'illuminating' and 'recording the diffraction image' are then carried out for further portions of the lithography mask. Between at least two portions of the lithography mask that are thereby detected, there is in each case an overlap region whose surface extent measures at least 5% or more of the smaller of the two portions of the lithography mask. The repetition takes place until the detected portions of the lithography mask completely cover a region of the lithography mask to be detected. The structure of the lithography mask is calculated from the recorded diffraction images of the illuminated portions. A device for carrying out the structure detection method is also specified, which comprises a light source, a spatially-resolving detector and a mask holder. This results in a method and a device for detecting the structure of a lithography mask, in which the demands placed on an optical unit arranged downstream in the beam path from the illumination light of the lithography mask are reduced.

Method for detecting a structure of a lithography mask and device for carrying out the method

The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps:

Method for correcting the critical dimension uniformity of a photomask for semiconductor lithography

A pattern inspection apparatus includes: an optical image acquiring mechanism to acquire optical image data of a corresponding divided pattern for each of masks for multiple patterning has been formed; a position deviation map generating processing circuitry to generate position deviation maps regarding the corresponding divided pattern; a difference position value map generating processing circuitry to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps; a region specifying processing circuitry to specify at least one region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map; and an output mechanism to output at least coordinates, a type of defect, and information of a reference image of each region specified for the each region specified.

Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image, pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system

A method for analyzing a photomask comprises the determination of a Bossung plot.

Method for analyzing a photomask

The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.

Method and apparatus for measuring of masks for the photo-lithography

A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.

Method and device for measuring the relative local position error of one of the sections of an object that is exposed section by section

The invention relates to a method for analyzing masks for photolithography. In this method, an aerial image of the mask for a first focus setting is generated and stored in an aerial image data record. The aerial image data record is transferred to an algorithm that simulates a photolithographic wafer exposure on the basis of this data record. In this case, the simulation is carried out for a plurality of mutually different energy doses. Then, at a predetermined height from the wafer surface, contours which separate regions with photoresist from those regions without photoresist are in each case determined. The result, that is to say the contours, are stored for each of the energy doses in each case in a contour data record with the energy dose as a parameter. Finally, the contour data records are combined to form a three-dimensional multicontour data record with the reciprocal of the energy dose as a third dimension, and, on the basis of the transitions from zero to values different than zero in the contours, a three-dimensional profile of the reciprocal of the energy dose depending on the position on the mask is generated. This profile, the so-called effective aerial image, is output or stored or automatically evaluated. The same can also occur with sections through said profile.

Method for analyzing masks for photolithography

An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.

Microscope imaging system and method for emulating a high aperture imaging system, particularly for mask inspection

The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.

Method and apparatus for analyzing a group of photolithographic masks

Apparatus for inspecting objects especially masks in microlithography that are disposed in a vacuum chamber. The apparatus includes a converter for converting illuminating radiation emitted from the object into a radiation of a higher wavelength. A sensor for recording images is disposed outside the vacuum chamber and arranged as an optical interface from the vacuum chamber to the sensor of the converter or at least one part of an image lens is arranged as a window in the vacuum chamber.

Arrangement for inspecting objects, especially masks in microlithography

Imaging system for a microscope based on extreme ultraviolet (EUV) radiation. The present invention is directed to a reflective imaging system for an x-ray microscope for examining and object in an object plane, wherein the object is illuminated by rays of a wavelength of less than 100 nm, particularly less than 30 nm, and is imaged in a magnified manner in an image plane. In the imaging system, according to the invention, for a microscope based on extreme ultraviolet (EUV) radiation with wavelengths in the range of less than 100 nm, with a magnification of 0.1&#xd7; to 1000&#xd7; and a structural length of less than 5 m, at least one of the imaging optical elementsandin the beam path has a diffractive-reflective structure which is arranged on a spherical or plane area and has a non-rotationally symmetric, asymmetric shape. The arrangement according to the invention provides an imaging system which avoids the disadvantages of the prior art and ensures a high imaging quality. The manufacturing cost remains reasonable due to the exclusive use of spherical mirrors.

Imaging system for an extreme ultraviolet (EUV) beam-based microscope

The invention is directed to an arrangement for autofocusing onto a measuring location on an object moving in a direction which is at least approximately vertical to the optical axis of the imaging optics. According to the invention, a diaphragm device is to be provided the diaphragm opening of which extends in a direction aligned with the direction of movement of the measuring location; a receiving device for the measuring light has receiving areas arranged in a row beside each other and is inclined relative to the optical axis so that the image from the diaphragm device is incident on the receiving areas at an inclination of an angle &agr;; wherein the receiving device and the diaphragm opening are positioned relative to each other in such a way that characteristic measuring values are measured on the receiving areas when the measuring location is in or near the focus position. An evaluating device compares the measured values read sequentially from the receiving areas with stored desired values and from them generates signals, for example, for a microscope arrangement and/or&mdash;if deviations have been determined&mdash;for correcting signals for a relocation device by means of which the relocation of the direction of movement into the focal plane of the imaging optics is effected.

Automatic focusing device for an optical appliance

An autofocus for a confocal microscope is realized by means of a confocal microscope arrangement comprising an illumination arrangement for illuminating an object in a raster pattern, first means for generating a first wavelength-selective splitting of the illumination light and second means for generating a second wavelength-selective splitting of the light coming from the object in a parallel manner for a plurality of points of the object, and detection means for detecting the light distribution generated by the second means, wherein an at least point-by-point spectral splitting and detection of an object image in a wavelength-selective manner is carried out and a control signal is generated from the determination of the frequency deviation and/or intensity deviation from a predetermined reference value corresponding to the object position in order to adjust the focal position by means of the vertical object position and/or the imaging system of the microscope. Further, a process is realized for determining deviations of at least a first height profile from at least one simultaneously or previously detected second height profile, preferably for detecting and/or monitoring defects in semiconductor structures, wherein a first object is illuminated in a wavelength-selective manner by a light source and the light originating from the first object is detected and is compared electronically with a previously or simultaneously detected second object.

Confocal microscopic device

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Jena, Germany

Thomas Scheruebl